New Product SiA413ADJ Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R () (Max.) I (A) Q (Typ.) Thermally Enhanced PowerPAK SC-70 DS DS(on) D g a Package 0.029 at V = - 4.5 V GS - 12 - Small Footprint Area a 0.034 at V = - 2.5 V GS - 12 - Low On-Resistance - 12 23 nC a 0.044 at V = - 1.8 V GS - 12 Material categorization: 0.100 at V = - 1.5 V For definitions of compliance please see - 3 GS www.vishay.com/doc 99912 PowerPAK SC-70-6L-Single APPLICATIONS 1 Load Switch, PA Switch, and Battery Switch for Portable D Devices 2 D 3 S G D 6 S Marking Code D 5 G S 2.05 mm 2.05 mm B S X 4 Part code X X X Lot Traceability and Date code Ordering Information: D SiA413ADJ-T4-GE3 (Lead (Pb)-free and Halogen-free) SiA413ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 12 DS V V Gate-Source Voltage 8 GS a T = 25 C - 12 C a T = 70 C - 12 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 10 A b, c T = 70 C A - 8 A Pulsed Drain Current (t = 300 s) I - 40 DM a T = 25 C - 12 C I Continuous Source-Drain Diode Current S b, c T = 25 C - 2.9 A T = 25 C 19 C T = 70 C 12 C P Maximum Power Dissipation W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 28 36 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 5.3 6.5 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. Document Number: 63650 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S12-1141-Rev. B, 21-May-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiA413ADJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 12 V DS GS D V Temperature Coefficient V /T - 11 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.7 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 12 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 6.7 A 0.024 0.029 GS D V = - 2.5 V, I = - 6.2 A 0.028 0.034 GS D a R Drain-Source On-State Resistance DS(on) V = - 1.8 V, I = - 2.3 A 0.036 0.044 GS D V = - 1.5 V, I = - 1 A 0.050 0.100 GS D a g V = - 10 V, I = - 6.7 A 30 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1800 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 450 pF oss DS GS C Reverse Transfer Capacitance 390 rss V = - 6 V, V = - 8 V, I = - 10 A 38 57 DS GS D Q Total Gate Charge g 23 35 nC Q Gate-Source Charge V = - 6 V, V = - 4.5 V, I = - 10 A 3 gs DS GS D Q Gate-Drain Charge 6.5 gd R Gate Resistance f = 1 MHz 7 g t Turn-On Delay Time 20 30 d(on) Rise Time t 40 60 V = - 6 V, R = 0.75 r DD L I - 8 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 65 100 d(off) Fall Time t 40 60 f ns t Turn-On Delay Time 10 15 d(on) Rise Time t 12 20 V = - 6 V, R = 0.75 r DD L I - 8 A, V = - 8 V, R = 1 t Turn-Off Delay Time D GEN g 70 105 d(off) t Fall Time 40 60 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 12 S C A I Pulse Diode Forward Current 40 SM V I = - 8 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 40 60 ns rr Q Body Diode Reverse Recovery Charge 20 30 nC rr I = - 8 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 14 a ns t Reverse Recovery Rise Time 26 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63650 For technical questions, contact: pmostechsupport vishay.com 2 S12-1141-Rev. B, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000