SiA425EDJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) Definition DS DS(on) D g a TrenchFET Power MOSFET 0.060 at V = - 4.5 V GS - 4.5 New Thermally Enhanced PowerPAK a 0.065 at V = - 3.6 V GS - 4.5 - 20 4.9 nC SC-70 Package a 0.080 at V = - 2.5 V GS - 4.5 - Small Footprint Area 0.120 at V = - 1.8 V - 2 GS - Low On-Resistance Typical ESD Protection 2400 V 100 % R Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS S PowerPAK SC-70-6L-Single Load Switch and Battery Switch for Portable Devices 1 D 2 Marking Code D 3 G B M X G Part code R D X X X 6 Lot Traceability S D 5 and Date code S 2.05 mm 2.05 mm 4 D Ordering Information: SiA425EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V V Gate-Source Voltage 12 GS a T = 25 C - 4.5 C a T = 70 C - 4.5 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C - 4.5 A a, b, c T = 70 C A - 4.5 A I - 15 Pulsed Drain Current DM a T = 25 C - 4.5 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 2.4 A T = 25 C 15.6 C T = 70 C 10 C Maximum Power Dissipation P W D b, c T = 25 C 2.9 A b, c T = 70 C 1.8 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 32 43 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 68 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 80 C/W. Document Number: 65575 www.vishay.com S09-2268-Rev. A, 02-Nov-09 1SiA425EDJ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 15 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.6 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1 V GS(th) DS GS D V = 0 V, V = 4.5 V 4 A DS GS I Gate-Source Leakage GSS V = 0 V, V = 12 V 8 mA DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 10 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 4.2 A 0.050 0.06 GS D V = - 3.6 V, I = - 4.0 A 0.053 0.065 GS D a R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 3.6 A 0.065 0.080 GS D V = - 1.8 V, I = - 2 A 0.091 0.120 GS D a g V = - 10 V, I = - 4.2 A 15 S Forward Transconductance fs DS D b Dynamic R Gate Resistance f = 1 MHz 1.2 6 12 k g t Turn-On Delay Time 1.2 2.4 d(on) t Rise Time V = - 10 V, R = 2.2 510 r DD L I - 4.5 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 14 28 d(off) t Fall Time 10 20 f s t Turn-On Delay Time 0.5 1 d(on) t Rise Time V = - 10 V, R = 2.2 1.4 2.8 r DD L I - 4.5 A, V = - 10 V, R = 1 Turn-Off Delay Time t 20 40 D GEN g d(off) t Fall Time 10 20 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 4.5 S C A I Pulse Diode Forward Current - 15 SM Body Diode Voltage V I = - 4.5 A, V = 0 V - 0.9 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 20 40 ns rr Body Diode Reverse Recovery Charge Q 11 20 nC rr I = - 4.5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 12 a ns t Reverse Recovery Rise Time 8 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65575 2 S09-2268-Rev. A, 02-Nov-09