X-On Electronics has gained recognition as a prominent supplier of SIA911ADJ-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIA911ADJ-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIA911ADJ-T1-GE3 Vishay

SIA911ADJ-T1-GE3 electronic component of Vishay
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Part No.SIA911ADJ-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 20V 4.5A 6.5W
Datasheet: SIA911ADJ-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1916 ea
Line Total: USD 574.8 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
4530
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.583
10 : USD 0.5005
100 : USD 0.374
500 : USD 0.2937
1000 : USD 0.2277
3000 : USD 0.1892

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIA911ADJ-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIA911ADJ-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET a 0.116 at V = - 4.5 V - 4.5 GS New Thermally Enhanced PowerPAK RoHS a - 20 0.155 at V = - 2.5 V 4.9 nC GS - 4.5 COMPLIANT SC-70 Package a 0.205 at V = - 1.8 V - Small Footprint Area GS - 4.5 - Low On-Resistance APPLICATIONS PowerPAK SC-70-6 Dual Load Switch, PA Switch and Battery Switch for Portable Devices S S 1 2 1 S 1 Marking Code 2 G 1 3 D 1 D G X G G 1 2 D 2 Part Code X X X D 1 D 2 Lot Traceability 6 G 2 and Date Code 5 2.05 mm 2.05 mm S 2 4 D D 1 2 Ordering Information: SiA911ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 8 GS a T = 25 C - 4.5 C a T = 70 C - 4.5 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 3.2 A b, c T = 70 C A - 2.6 A Pulsed Drain Current I - 8 DM a T = 25 C - 4.5 C I Continuous Source-Drain Diode Current S b, c T = 25 C - 1.5 A T = 25 C 6.5 C T = 70 C 4.2 C P Maximum Power Dissipation W D b, c T = 25 C 1.8 A b, c T = 70 C 1.1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 55 70 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 15 19 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (New Product SiA911ADJ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 19 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.4 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = - 4.5 V - 8 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 2.8 A 0.096 0.116 GS D a R V = - 2.5 V, I = - 2.3 A 0.126 0.155 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 0.54 A 0.165 0.205 GS D a g V = - 10 V, I = - 2.8 A 7S Forward Transconductance fs DS D b Dynamic Input Capacitance C 345 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 65 pF oss DS GS C Reverse Transfer Capacitance 50 rss V = - 10 V, V = - 8 V, I = - 3.5 A 8.4 13 DS GS D Q Total Gate Charge g 4.9 7.4 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 3.5 A 0.75 gs DS GS D Q Gate-Drain Charge 1.2 gd R Gate Resistance f = 1 MHz 6 g t Turn-On Delay Time 15 25 d(on) t Rise Time V = - 10 V, R = 2.85 45 70 r DD L I - 3.5 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 20 30 D GEN g d(off) t Fall Time 10 15 f ns Turn-On Delay Time t 510 d(on) t Rise Time V = - 10 V, R = 2.85 10 15 r DD L I - 3.5 A, V = - 8 V, R = 1 Turn-Off Delay Time t 20 30 D GEN g d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics T = 25 C Continuous Source-Drain Diode Current I - 4.5 S C A I Pulse Diode Forward Current - 8 SM V I = - 1.0 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 30 60 ns rr Q Body Diode Reverse Recovery Charge 20 40 nC rr I = - 4.5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 15 a ns t Reverse Recovery Rise Time 15 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68968 2 S-82481-Rev. A, 13-Oct-08

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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