New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET a 0.116 at V = - 4.5 V - 4.5 GS New Thermally Enhanced PowerPAK RoHS a - 20 0.155 at V = - 2.5 V 4.9 nC GS - 4.5 COMPLIANT SC-70 Package a 0.205 at V = - 1.8 V - Small Footprint Area GS - 4.5 - Low On-Resistance APPLICATIONS PowerPAK SC-70-6 Dual Load Switch, PA Switch and Battery Switch for Portable Devices S S 1 2 1 S 1 Marking Code 2 G 1 3 D 1 D G X G G 1 2 D 2 Part Code X X X D 1 D 2 Lot Traceability 6 G 2 and Date Code 5 2.05 mm 2.05 mm S 2 4 D D 1 2 Ordering Information: SiA911ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 8 GS a T = 25 C - 4.5 C a T = 70 C - 4.5 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 3.2 A b, c T = 70 C A - 2.6 A Pulsed Drain Current I - 8 DM a T = 25 C - 4.5 C I Continuous Source-Drain Diode Current S b, c T = 25 C - 1.5 A T = 25 C 6.5 C T = 70 C 4.2 C P Maximum Power Dissipation W D b, c T = 25 C 1.8 A b, c T = 70 C 1.1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 55 70 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 15 19 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (New Product SiA911ADJ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 19 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.4 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = - 4.5 V - 8 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 2.8 A 0.096 0.116 GS D a R V = - 2.5 V, I = - 2.3 A 0.126 0.155 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 0.54 A 0.165 0.205 GS D a g V = - 10 V, I = - 2.8 A 7S Forward Transconductance fs DS D b Dynamic Input Capacitance C 345 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 65 pF oss DS GS C Reverse Transfer Capacitance 50 rss V = - 10 V, V = - 8 V, I = - 3.5 A 8.4 13 DS GS D Q Total Gate Charge g 4.9 7.4 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 3.5 A 0.75 gs DS GS D Q Gate-Drain Charge 1.2 gd R Gate Resistance f = 1 MHz 6 g t Turn-On Delay Time 15 25 d(on) t Rise Time V = - 10 V, R = 2.85 45 70 r DD L I - 3.5 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 20 30 D GEN g d(off) t Fall Time 10 15 f ns Turn-On Delay Time t 510 d(on) t Rise Time V = - 10 V, R = 2.85 10 15 r DD L I - 3.5 A, V = - 8 V, R = 1 Turn-Off Delay Time t 20 30 D GEN g d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics T = 25 C Continuous Source-Drain Diode Current I - 4.5 S C A I Pulse Diode Forward Current - 8 SM V I = - 1.0 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 30 60 ns rr Q Body Diode Reverse Recovery Charge 20 40 nC rr I = - 4.5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 15 a ns t Reverse Recovery Rise Time 15 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68968 2 S-82481-Rev. A, 13-Oct-08