New Product SiA920DJ Vishay Siliconix Dual N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) Definition DS DS(on) g D TrenchFET Power MOSFET 0.027 at V = 4.5 V 4.5 GS Thermally Enhanced PowerPAK 0.031 at V = 2.5 V 4.5 GS SC-70 Package 8 0.036 at Vgs = 1.8 V 4.5 4.8 nC - Small Footprint Area 0.047 at Vgs = 1.5 V 4.5 - Low On-Resistance 0.110 at Vgs = 1.2 V 1.5 100 % R Tested g Compliant to RoHS Directive 2002/95/EC PowerPAK SC-70-6 Dual APPLICATIONS 1 Load Switch with Low Voltage Drop S 1 2 Load Switch for 1.2 V/1.5 V/1.8 V Power Lines G 1 Smart Phones, Tablet PCs, Portable Media Players 3 D 1 D 2 D 1 D 2 6 D D G 1 2 2 5 2.05 mm 2.05 mm S 2 4 G G 1 2 Ordering Information: SiA920DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code N-Channel MOSFET N-Channel MOSFET S S 1 2 C H X Part code X X X Lot Traceability and Date code ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 8 DS V Gate-Source Voltage V 5 GS a T = 25 C C 4.5 a T = 70 C C 4.5 Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C A 4.5 a, b, c T = 70 C A 4.5 A I Pulsed Drain Current (t = 300 s) 20 DM a T = 25 C C 4.5 Continuous Source-Drain Diode Current I b, c S T = 25 C A 1.6 T = 25 C 7.8 C T = 70 C 5 C P Maximum Power Dissipation W D b, c T = 25 C A 1.9 b, c T = 70 C A 1.2 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 52 65 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 12.5 16 thJC Notes: a. Package limited b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 C/W. Document Number: 63299 www.vishay.com S11-1381-Rev. A, 11-Jul-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiA920DJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 8V DS GS D V Temperature Coefficient V /T 11 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.3 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.35 0.7 V GS(th) DS GS D I V = 0 V, V = 5 V Gate-Source Leakage 100 nA GSS DS GS V = 8 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 8 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 10 A On-State Drain Current D(on) DS GS V 4.5 V, I = 5.3 A 0.022 0.027 GS D V 2.5 V, I = 4.9 A 0.025 0.031 GS D a R V 1.8 V, I = 4.6 A 0.029 0.036 Drain-Source On-State Resistance DS(on) GS D V 1.5 V, I = 1.5 A 0.035 0.047 GS D V 1.2 V, I = 0.5 A 0.050 0.110 GS D a g V = 10 V, I = 5.3 A 28 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 470 iss C V = 4 V, V = 0 V, f = 1 MHz Output Capacitance 175 pF oss DS GS C Reverse Transfer Capacitance 85 rss Q Total Gate Charge 4.8 7.5 g Q V = 4 V, V = 4.5 V, I = 6.9 A Gate-Source Charge 0.63 nC gs DS GS D Q Gate-Drain Charge 0.6 gd R Gate Resistance f = 1 MHz 0.8 4 8 g Turn-On Delay Time t 510 d(on) t Rise Time 12 25 r V = 10 V, R = 1.9 ns DD L Turn-Off Delay Time t 20 40 d(off) I 5.5 A, V = 4.5 V, R = 1 D GEN g t Fall Time 715 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 4.5 S C A I Pulse Diode Forward Current 20 SM I = 5.5 A, V 0 V Body Diode Voltage V 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 15 30 ns rr Q Body Diode Reverse Recovery Charge 510 nC rr I = 5.5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 7.8 a ns t Reverse Recovery Rise Time 7.2 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63299 2 S11-1381-Rev. A, 11-Jul-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000