X-On Electronics has gained recognition as a prominent supplier of SIA928DJ-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIA928DJ-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIA928DJ-T1-GE3 Vishay

SIA928DJ-T1-GE3 electronic component of Vishay
SIA928DJ-T1-GE3 Vishay
SIA928DJ-T1-GE3 MOSFETs
SIA928DJ-T1-GE3  Semiconductors

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Part No. SIA928DJ-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET Dual N-Ch 30V Vds 3nC Qg Typ
Datasheet: SIA928DJ-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4538 ea
Line Total: USD 0.45 
Availability - 15900
Ship by Mon. 14 Apr to Wed. 16 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10321
Ship by Wed. 16 Apr to Tue. 22 Apr
MOQ : 175
Multiples : 1
175 : USD 0.3712
208 : USD 0.3125
210 : USD 0.3094
220 : USD 0.2948

15900
Ship by Mon. 14 Apr to Wed. 16 Apr
MOQ : 1
Multiples : 1
1 : USD 0.4538
10 : USD 0.3338
100 : USD 0.2346
500 : USD 0.1958
1000 : USD 0.1749
3000 : USD 0.1496
6000 : USD 0.1485

   
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We are delighted to provide the SIA928DJ-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIA928DJ-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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2.05 mm2.05 mm SiA928DJ www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV power MOSFET V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Thermally enhanced PowerPAK SC-70 package a 0.025 at V = 10 V 4.5 GS - Small footprint area a - Low on-resistance 30 0.029 at V = 6 V 4.5 3 nC GS a 0.033 at V = 4.5 V 4.5 100 % R tested g GS Material categorization: for definitions of compliance please see PowerPAK SC-70-6L Dual www.vishay.com/doc 99912 D 1 G 2 6 S APPLICATIONS 2 5 4 Portable devices such as smart phones, tablet PCs and D 1 mobile computing D 2 - Load switch - DC/DC converter - Power management 1 2 S D D 1 1 2 3 G 1 111 D 2 Top View Bottom View Marking Code: CM G G 1 2 Ordering Information: SiA928DJ-T1-GE3 (lead (Pb)-free and halogen free) N-Channel MOSFET S N-Channel MOSFET S 1 2 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 30 DS V Gate-Source Voltage V +20 / -16 GS a T = 25 C 4.5 C a T = 70 C 4.5 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C 4.5 A a, b, c T = 70 C 4.5 A A Pulsed Drain Current (t = 100 s) I 30 DM a T = 25 C 4.5 C Continuous Source-Drain Diode Current I S b, c T = 25 C 1.6 A T = 25 C 7.8 C T = 70 C 5 C Maximum Power Dissipation P W D b, c T = 25 C 1.9 A b, c T = 70 C 1.2 A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d,e Soldering Recommendations (Peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT b, f Maximum Junction-to-Ambient t 5 s R 52 65 thJA C/W Maximum Junction-to-Case (Drain) Steady state R 12.5 16 thJC Notes a. Package limited, T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state condition is 110 C/W. S16-1372-Rev. A, 11-Jul-16 Document Number: 75168 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 22.05 mm20055 mmSiA928DJ www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 - - V DS GS D V Temperature Coefficient V /T -14.7 - DS DS J I = 250 A mV/C D V Temperature Coefficient V /T --4.6 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1.2 - 2.2 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = +20 / -16 V - - 100 nA GSS DS GS V = 30 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C - - 10 DS GS J a On-State Drain Current I V 5 V, V = 4.5 V 5 - - A D(on) DS GS V = 10 V, I = 5 A - 0.020 0.025 GS D a Drain-Source On-State Resistance R V = 6 V, I = 4 A - 0.023 0.029 DS(on) GS D V = 4.5 V, I = 4 A - 0.026 0.033 GS D a Forward Transconductance g V = 15 V, I = 5 A - 25 - S fs DS D b Dynamic Input Capacitance C - 490 - iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz - 150 - pF oss DS GS Reverse Transfer Capacitance C -10 - rss C /C Ratio - 0.021 0.042 - rss iss V = 15 V, V = 10 V, I = 5 A - 6.6 10 DS GS D Total Gate Charge Q g -3 4.5 Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 5 A -1.4 - nC gs DS GS D Gate-Drain Charge Q -0.5- gd Output Charge Q V = 15 V, V = 0 V - 4.2 - oss DS GS Gate Resistance R f = 1 MHz 0.9 4.6 6.9 g Turn-On Delay Time t -13 25 d(on) Rise Time t -45 90 r V = 15 V, R = 3 DD L I 5 A, V = 4.5 V, R = 1 Turn-Off Delay Time t D GEN g -13 25 d(off) Fall Time t -25 50 f ns Turn-On Delay Time t -5 10 d(on) Rise Time t -27 55 r V = 15 V, R = 3 DD L I 5 A, V = 10 V, R = 1 Turn-Off Delay Time t D GEN g -10 20 d(off) Fall Time t -8 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - 4.5 S C A Pulse Diode Forward Current I -- 30 SM Body Diode Voltage V I = 5 A, V = 0 V - 0.85 1.2 V SD S GS Body Diode Reverse Recovery Time t -20 40 ns rr Body Diode Reverse Recovery Charge Q -7 15 nC rr I = 5 A, dI/dt = 100 A/s, F T = 25 C Reverse Recovery Fall Time t J -9.5 - a ns Reverse Recovery Rise Time t -10.5 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1372-Rev. A, 11-Jul-16 Document Number: 75168 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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