Si7636DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Available 0.004 at V = 10 V 28 GS Ultra-Low On-Resistance Using High Density 30 36 TrenchFET Gen II Power MOSFET Technology 0.0048 at V = 4.5 V 25 GS Q Optimized g New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % R Tested g APPLICATIONS PowerP AK SO-8 Low-Side DC/DC Conversion - Notebook S - Server 6.15 mm 5.15 mm 1 S - Workstation 2 S 3 Synchronous Rectifier, POL G D 4 D 8 D 7 D 6 D G 5 Bottom View S Ordering Information: Si7636DP-T1-E3 (Lead (Pb)-free) Si7636DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 28 17 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 22 13 A Pulsed Drain Current (10 s Pulse Width) I 60 A DM a I 4.3 1.7 Continuous Source Current (Diode Conduction) S Avalanche Current L = 0.1 mH I 50 AS T = 25 C 5.2 1.9 A a P W Maximum Power Dissipation D T = 70 C 3.3 1.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b,c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 19 24 a R Maximum Junction-to-Ambient thJA Steady State 52 65 C/W Maximum Junction-to-Case (Drain) Steady State R 1.3 1.8 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (Si7636DP Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1.0 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 25 A 0.0033 0.004 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 19 A 0.004 0.0048 GS D a g V = 15 V, I = 25 A 110 S Forward Transconductance fs DS D a V I = 2.9 A, V = 0 V 0.72 1.1 V Diode Forward Voltage SD S GS b Dynamic C Input Capacitance 5600 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 860 pF oss DS DS Reverse Transfer Capacitance C 415 rss Total Gate Charge Q 36 50 g Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 20 A 18 nC gs DS GS D Gate-Drain Charge Q 10 gd Gate Resistance R 0.6 1.3 2.0 g Turn-On Delay Time t 24 35 d(on) Rise Time t V = 15 V, R = 15 16 25 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 90 140 ns d(off) D GEN g t Fall Time 32 50 f t I = 2.9 A, dI/dt = 100 A/s 45 70 Source-Drain Reverse Recovery Time rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 60 V = 10 thru 4 V GS 50 50 40 40 30 30 20 20 T = 125 C C 10 10 25 C 3 V - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2468 10 V - Gate-to-Source Voltage (V) GS V - Drain-to-Source V oltage (V) DS Transfer Characteristics Output Characteristics www.vishay.com Document Number: 72768 2 S09-0272-Rev. G, 16-Feb-09 I - Drain Current (A) D I - Drain Current (A) D