X-On Electronics has gained recognition as a prominent supplier of SI7655DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7655DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7655DN-T1-GE3 Vishay

SI7655DN-T1-GE3 electronic component of Vishay
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Part No.SI7655DN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -20V 3.6mOhm@10V 40A P-Ch G-III
Datasheet: SI7655DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.5295 ea
Line Total: USD 1.53 
Availability - 8212
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8212
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.5295
10 : USD 1.2995
100 : USD 1.0649
250 : USD 1.0028
500 : USD 0.92
1000 : USD 0.8016
3000 : USD 0.7923
6000 : USD 0.7877
9000 : USD 0.7693

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI7655DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7655DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product Si7655DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g Low Thermal Resistance PowerPAK e Package with Small Size and Low 0.75 mm 0.0036 at V = - 10 V - 40 GS Profile e - 20 0.0048 at V = - 4.5 V 72 nC - 40 GS 100 % R and UIS Tested g e 0.0085 at V = - 2.5 V Material categorization: For definitions of compliance - 40 GS please see www.vishay.com/doc 99912 PowerPAK 1212-8S APPLICATIONS 3.3 mm Smart Phones, Tablet PCs, Mobile 0.75 mm S Computing S - Battery Switch S 1 S G 2 - Load Switch 3.3 mm 3 4 G D D D 8 7 D 6 5 Bottom View D Ordering Information: Si7655DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V - 20 Drain-Source Voltage DS V V Gate-Source Voltage 12 GS e T = 25 C - 40 C e T = 70 C - 40 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 31 A a, b T = 70 C - 25 A A I - 100 Pulsed Drain Current (t = 300 s) DM e T = 25 C - 40 C I Continuous Source-Drain Diode Current S a, b T = 25 C - 4 A I - 20 Avalanche Current AS L = 0.1 mH E Single-Pulse Avalanche Energy 20 mJ AS T = 25 C 57 C T = 70 C 36 C P Maximum Power Dissipation W D a, b T = 25 C 4.8 A a, b T = 70 C 3 A T , T Operating Junction and Storage Temperature Range - 50 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 63617 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S12-2393-Rev. B, 15-Oct-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product Si7655DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, b Maximum Junction-to-Ambient t 10 s R 21 26 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.7 2.2 thJC Notes: a.Surface mounted on 1 x 1 FR4 board. b.Maximum under steady state conditions is 63 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 12 mV/ DS DS J I = - 250 A D C V Temperature Coefficient V /T 2.6 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.5 - 1.1 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 10 V - 20 A D(on) DS GS V = - 10 V, I = - 20 A 0.0030 0.0036 GS D a Drain-Source On-State Resistance R V = - 4.5 V, I = - 15 A 0.0039 0.0048 DS(on) GS D V = - 2.5 V, I = - 10 A 0.0062 0.0085 GS D a Forward Transconductance g V = - 15 V, I = - 20 A 90 S fs DS D b Dynamic Input Capacitance C 6600 iss Output Capacitance C 890V = - 10 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 930 rss V = - 10 V, V = - 10 V, I = - 20 A 150 225 DS GS D Total Gate Charge Q g 72 110 nC Gate-Source Charge Q V = - 10 V, V = - 4.5 V, I = - 20 A 12 gs DS GS D Gate-Drain Charge Q 19 gd Gate Resistance R f = 1 MHz 0.5 2.6 5.2 g Turn-On Delay Time t 45 90 d(on) Rise Time t V = - 10 V, R = 1 45 90 r DD L I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime t 100200 D GEN g d(off) Fall Time t 35 70 f ns Turn-On Delay Time t 13 25 d(on) Rise Time t 10 20 V = - 10 V, R = 1 r DD L I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime t 110220 D GEN g d(off) Fall Time t 25 50 f Drain-Source Body Diode Characteristics c Continuous Source-Drain Diode Current I T = 25 C - 40 S C A a Pulse Diode Forward Current I - 100 SM Body Diode Voltage V I = - 10 A - 0.75 - 1.2 V SD F Body Diode Reverse Recovery Time t 30 60 ns rr Body Diode Reverse Recovery Charge Q 17 26 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 15 a ns Reverse Recovery Rise Time t 15 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63617 For technical questions, contact: pmostechsupport vishay.com 2 S12-2393-Rev. B, 15-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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