New Product Si7655DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g Low Thermal Resistance PowerPAK e Package with Small Size and Low 0.75 mm 0.0036 at V = - 10 V - 40 GS Profile e - 20 0.0048 at V = - 4.5 V 72 nC - 40 GS 100 % R and UIS Tested g e 0.0085 at V = - 2.5 V Material categorization: For definitions of compliance - 40 GS please see www.vishay.com/doc 99912 PowerPAK 1212-8S APPLICATIONS 3.3 mm Smart Phones, Tablet PCs, Mobile 0.75 mm S Computing S - Battery Switch S 1 S G 2 - Load Switch 3.3 mm 3 4 G D D D 8 7 D 6 5 Bottom View D Ordering Information: Si7655DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V - 20 Drain-Source Voltage DS V V Gate-Source Voltage 12 GS e T = 25 C - 40 C e T = 70 C - 40 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 31 A a, b T = 70 C - 25 A A I - 100 Pulsed Drain Current (t = 300 s) DM e T = 25 C - 40 C I Continuous Source-Drain Diode Current S a, b T = 25 C - 4 A I - 20 Avalanche Current AS L = 0.1 mH E Single-Pulse Avalanche Energy 20 mJ AS T = 25 C 57 C T = 70 C 36 C P Maximum Power Dissipation W D a, b T = 25 C 4.8 A a, b T = 70 C 3 A T , T Operating Junction and Storage Temperature Range - 50 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 63617 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S12-2393-Rev. B, 15-Oct-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product Si7655DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, b Maximum Junction-to-Ambient t 10 s R 21 26 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.7 2.2 thJC Notes: a.Surface mounted on 1 x 1 FR4 board. b.Maximum under steady state conditions is 63 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 12 mV/ DS DS J I = - 250 A D C V Temperature Coefficient V /T 2.6 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.5 - 1.1 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 10 V - 20 A D(on) DS GS V = - 10 V, I = - 20 A 0.0030 0.0036 GS D a Drain-Source On-State Resistance R V = - 4.5 V, I = - 15 A 0.0039 0.0048 DS(on) GS D V = - 2.5 V, I = - 10 A 0.0062 0.0085 GS D a Forward Transconductance g V = - 15 V, I = - 20 A 90 S fs DS D b Dynamic Input Capacitance C 6600 iss Output Capacitance C 890V = - 10 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 930 rss V = - 10 V, V = - 10 V, I = - 20 A 150 225 DS GS D Total Gate Charge Q g 72 110 nC Gate-Source Charge Q V = - 10 V, V = - 4.5 V, I = - 20 A 12 gs DS GS D Gate-Drain Charge Q 19 gd Gate Resistance R f = 1 MHz 0.5 2.6 5.2 g Turn-On Delay Time t 45 90 d(on) Rise Time t V = - 10 V, R = 1 45 90 r DD L I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime t 100200 D GEN g d(off) Fall Time t 35 70 f ns Turn-On Delay Time t 13 25 d(on) Rise Time t 10 20 V = - 10 V, R = 1 r DD L I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime t 110220 D GEN g d(off) Fall Time t 25 50 f Drain-Source Body Diode Characteristics c Continuous Source-Drain Diode Current I T = 25 C - 40 S C A a Pulse Diode Forward Current I - 100 SM Body Diode Voltage V I = - 10 A - 0.75 - 1.2 V SD F Body Diode Reverse Recovery Time t 30 60 ns rr Body Diode Reverse Recovery Charge Q 17 26 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 15 a ns Reverse Recovery Rise Time t 15 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63617 For technical questions, contact: pmostechsupport vishay.com 2 S12-2393-Rev. B, 15-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000