0.8 mm Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET a, e V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g Small 0.8 mm x 0.8 mm outline area 0.135 at V = -4.5 V -2.3 GS Low 0.4 mm max. profile -30 0.150 at V = -3.7 V -2.1 5.2 nC GS Typical ESD protection 1400 V HBM 0.215 at V = -2.5 V -1.8 GS Material categorization: for definitions of compliance please see MICRO FOOT 0.8 x 0.8 www.vishay.com/doc 99912 S 22 SS S APPLICATIONS 33 Load switches and chargers switches Battery management, power management G 11 DC/DC converters GG 44 1 For smart phones, tablet PCs, and mobile D Backside View Bump Side View computing D Marking Code: xx = AL P-Channel MOSFET xxx = Date/Lot traceability code Ordering Information: Si8821EDB-T2-E1 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V -30 DS V Gate-Source Voltage V 12 GS a T = 25 C -2.3 A a T = 70 C -1.8 A Continuous Drain Current (T = 150 C) I J D b T = 25 C -1.6 A b T = 70 C -1.3 A A Pulsed Drain Current (t = 300 s) I -15 DM a T = 25 C -0.7 C Continuous Source-Drain Diode Current I S b T = 25 C -0.4 A a T = 25 C 0.9 A a T = 70 C 0.6 A Maximum Power Dissipation P W D b T = 25 C 0.5 A b T = 70 C 0.3 A Operating Junction and Storage Temperature Range T , T -55 to 150 J stg VPR 260 C c Package Reflow Conditions IR/Convection 260 Notes a. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s. b. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 5 s. c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on T = 25 C. A S15-0509-Rev. D, 16-Mar-15 Document Number: 63268 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 xxx xx 0.8 mmSi8821EDB www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, b Maximum Junction-to-Ambient t = 5 s 105 135 R C/W thJA c, d Maximum Junction-to-Ambient t = 5 s 200 260 Notes a. Surface mounted on 1 x 1 FR4 board with full copper. b. Maximum under steady state conditions is 185 C/W. c. Surface mounted on 1 x 1 FR4 board with minimum copper. d. Maximum under steady state conditions is 330 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -30 - - V DS GS D V Temperature Coefficient V /T --21 - DS DS J I = -250 A mV/C D V Temperature Coefficient V /T -0.5 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -0.6 - -1.3 V GS(th) DS GS D V = 0 V, V = 4.5 V - - 0.1 DS GS Gate-Source Leakage I A GSS V = 0 V, V = 12 V - - 5 DS GS V = -30 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -30 V, V = 0 V, T = 70 C - - -10 DS GS J a On-State Drain Current I V -5 V, V = -4.5 V -5 - - A D(on) DS GS V = -4.5 V, I = -1 A - 0.105 0.135 GS D a Drain-Source On-State Resistance R V = -3.7 V, I = -1 A - 0.115 0.150 DS(on) GS D V = -2.5 V, I = -0.5 A - 0.150 0.215 GS D a Forward Transconductance g V = -5 V, I = -1 A - 4.8 - S fs DS D b Dynamic Input Capacitance C - 440 - iss Output Capacitance C V = -15 V, V = 0 V, f = 1 MHz -50- pF oss DS GS Reverse Transfer Capacitance C -40- rss V = -15 V, V = -10 V, I = -1 A - 11 17 DS GS D Total Gate Charge Q g -5.2 8 nC Gate-Source Charge Q V = -15 V, V = -4.5 V, I = -1 A -0.9 - gs DS GS D Gate-Drain Charge Q -1.6- gd Gate Resistance R V = -0.1 V, f = 1 MHz - 15 - g GS Turn-On Delay Time t -25 50 d(on) Rise Time t -20 40 r V = -15 V, R = 15 DD L I -1 A, V = -4.5 V, R = 1 D GEN g Turn-Off Delay Time t -4080 d(off) Fall Time t -15 30 f ns Turn-On Delay Time t -5 10 d(on) Rise Time t -10 20 r V = -15 V, R = 15 DD L I -1 A, V = -10 V, R = 1 D GEN g Turn-Off Delay Time t -50100 d(off) Fall Time t -15 30 f S15-0509-Rev. D, 16-Mar-15 Document Number: 63268 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000