SiA440DJ Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () (Max.) Q (Typ.) DS DS(on) I (A) g D 100 % R and UIS Tested g 0.026 at V = 10 V Material categorization: 12 GS For definitions of compliance please see 0.028 at V = 4.5 V 12 GS 40 6.9 nC www.vishay.com/doc 99912 0.029 at V = 3.7 V 12 GS 0.035 at V = 2.5 V 12 GS APPLICATIONS Portable Devices such as Tablet PCs D PowerPAK SC-70-6L-Single and Mobile Computing - DC/DC Converter 1 D - Boost Converter 2 D - Load Switch G 3 G - Power Management D 6 - LED Backlighting S D 5 S Marking Code 2.05 mm S 2.05 mm N-Channel MOSFET 4 A U X Bottom View Part code X X X Ordering Information: Lot Traceability SiA440DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) and Date code ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V Drain-Source Voltage 40 DS V V Gate-Source Voltage 12 GS a T = 25 C C 12 a T = 70 C C 12 Continuous Drain Current (T = 150 C) I J D a,b, c T = 25 C A 8.6 b, c T = 70 C A 6.9 A I Pulsed Drain Current (t = 100 s) 50 DM a T = 25 C C 12 I Continuous Source-Drain Diode Current S b, c T = 25 C A 2.9 Single Avalanche Current I 11 AS L = 0.1 mH Single Avalanche Energy E 6 mJ AS T = 25 C 19 C T = 70 C 12 C P Maximum Power Dissipation W D b, c T = 25 C A 3.5 b, c T = 70 C A 2.2 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 28 36 Maximum Junction-to-Ambient thJA C/W Steady State R Maximum Junction-to-Case (Drain) 5.3 6.5 thJC Notes: a. Based on package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. Document Number: 64138 For technical questions, contact:: pmostechsupport vishay.com www.vishay.com S13-1268-Rev. A, 27-May-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiA440DJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 40 V DS GS D V Temperature Coefficient V /T 39 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3.6 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.6 1.4 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 10 A On-State Drain Current D(on) DS GS V = 10 V, I = 9 A 0.021 0.026 GS D V = 4.5 V, I = 7 A 0.022 0.028 GS D a R Drain-Source On-State Resistance DS(on) V = 3.7 V, I = 7 A 0.023 0.029 GS D V = 2.5 V, I = 7 A 0.026 0.035 GS D a g V = 10 V, I = 9 A 45 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 700 iss C V = 20 V, V = 0 V, f = 1 MHz Output Capacitance 87 pF oss DS GS C Reverse Transfer Capacitance 40 rss V = 20 V, V = 10 V, I = 9 A 14.3 21.5 DS GS D Q Total Gate Charge g 6.9 10.5 nC Gate-Source Charge Q V = 20 V, V = 4.5 V, I = 9 A 1.4 gs DS GS D Q Gate-Drain Charge 2 gd Gate Resistance R f = 1 MHz 0.2 1 2 g t Turn-On Delay Time 715 d(on) Rise Time t 510 V = 20 V, R = 2.9 r DD L I 7 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 20 40 d(off) t Fall Time 310 f ns t Turn-On Delay Time 12 25 d(on) t Rise Time V = 20 V, R = 2.9 32 65 r DD L I 7 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 23 45 d(off) t Fall Time 510 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 12 S C A I 50 Pulse Diode Forward Current (t = 100 s) SM V I = 7 A Body Diode Voltage 0.85 1.2 V SD S t Body Diode Reverse Recovery Time 15 30 ns rr Q Body Diode Reverse Recovery Charge 7.5 15 nC rr I = 7 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 9 a ns t Reverse Recovery Rise Time 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact:: pmostechsupport vishay.com Document Number: 64138 2 S13-1268-Rev. A, 27-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000