X-On Electronics has gained recognition as a prominent supplier of SIHA25N50E-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHA25N50E-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHA25N50E-E3 Vishay

SIHA25N50E-E3 electronic component of Vishay
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Part No.SIHA25N50E-E3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 500V 26A 145mOhms10V
Datasheet: SIHA25N50E-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.564 ea
Line Total: USD 3.56 
Availability - 375
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
375
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 3.564
50 : USD 2.013
100 : USD 1.848
250 : USD 1.804
500 : USD 1.65
1000 : USD 1.573

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
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We are delighted to provide the SIHA25N50E-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHA25N50E-E3 and other electronic components in the MOSFETs category and beyond.

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SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Thin-Lead TO-220 FULLPAK Low figure-of-merit (FOM): R x Q on g Low input capacitance (C ) iss Reduced switching and conduction losses G Low gate charge (Q ) g Available Avalanche energy rated (UIS) Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 S D G N-Channel MOSFET APPLICATONS Hard switched topologies PRODUCT SUMMARY Power factor correction power supplies (PFC) V (V) at T max. 550 DS J R max. ( ) at 25 C V = 10 V 0.145 Switch mode power supplies (SMPS) DS(on) GS Q max. (nC) 86 g Computing Q (nC) 14 gs - PC silver box / ATX power supplies Q (nC) 25 gd Lighting Configuration Single - Two stage LED lighting ORDERING INFORMATION Package Thin-Lead TO-220 FULLPAK Lead (Pb)-free SiHA25N50E-E3 Lead (Pb)-free and halogen-free SiHA25N50E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 500 DS V Gate-source voltage V 30 GS T = 25 C 26 C e Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 16 A C a Pulsed drain current I 50 DM Linear derating factor 0.2 W/C b Single pulse avalanche energy E 273 mJ AS Maximum power dissipation P 35 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope V = 0 V to 80 % V 65 DS DS dV/dt V/ns d Reverse diode dV/dt 25 c Soldering recommendations (peak temperature) for 10 s 300 C Mounting torque M3 screw 0.6 Nm Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 4.4 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J e. Limited by maximum junction temperature THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -3.6 thJC S17-1308-Rev. E, 21-Aug-17 Document Number: 91628 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHA25N50E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.59 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 500 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 400 V, V = 0 V, T = 125 C - - 25 DS GS J Drain-source on-state resistance R V = 10 V I = 12 A - 0.125 0.145 DS(on) GS D Forward transconductance g V = 30 V, I = 12 A - 6.6 - S fs DS D Dynamic Input capacitance C V = 0 V, - 1980 - iss GS Output capacitance C -V = 100 V, 105- oss DS f = 1 MHz Reverse transfer capacitance C -8- rss pF Effective output capacitance, energy C - 105 - o(er) a related V = 0 V to 400 V, V = 0 V DS GS Effective output capacitance, time C - 285 - o(tr) b related Total gate charge Q -57 86 g Gate-source charge Q -1V = 10 V I = 12 A, V = 400 V 4- nC gs GS D DS Gate-drain charge Q -25- gd Turn-on delay time t -19 38 d(on) Rise time t -36 72 r V = 400 V, I = 12 A DD D ns R = 9.1 , V = 10 V Turn-off delay time t -5g GS 786 d(off) Fall time t -2958 f Gate input resistance R f = 1 MHz, open drain - 0.56 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 12 S showing the A G integral reverse Pulsed diode forward current I S -- 50 SM p - n junction diode Diode forward voltage V T = 25 C, I = 16.5 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 338 - ns rr T = 25 C, I = I , J F S Reverse recovery charge Q -5.3 - C rr dI/dt = 100 A/s, V = 25 V R Reverse recovery current I -29 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S17-1308-Rev. E, 21-Aug-17 Document Number: 91628 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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