SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Thin-Lead TO-220 FULLPAK Low figure-of-merit (FOM): R x Q on g Low input capacitance (C ) iss Reduced switching and conduction losses G Low gate charge (Q ) g Available Avalanche energy rated (UIS) Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 S D G N-Channel MOSFET APPLICATONS Hard switched topologies PRODUCT SUMMARY Power factor correction power supplies (PFC) V (V) at T max. 550 DS J R max. ( ) at 25 C V = 10 V 0.145 Switch mode power supplies (SMPS) DS(on) GS Q max. (nC) 86 g Computing Q (nC) 14 gs - PC silver box / ATX power supplies Q (nC) 25 gd Lighting Configuration Single - Two stage LED lighting ORDERING INFORMATION Package Thin-Lead TO-220 FULLPAK Lead (Pb)-free SiHA25N50E-E3 Lead (Pb)-free and halogen-free SiHA25N50E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 500 DS V Gate-source voltage V 30 GS T = 25 C 26 C e Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 16 A C a Pulsed drain current I 50 DM Linear derating factor 0.2 W/C b Single pulse avalanche energy E 273 mJ AS Maximum power dissipation P 35 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope V = 0 V to 80 % V 65 DS DS dV/dt V/ns d Reverse diode dV/dt 25 c Soldering recommendations (peak temperature) for 10 s 300 C Mounting torque M3 screw 0.6 Nm Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 4.4 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J e. Limited by maximum junction temperature THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -3.6 thJC S17-1308-Rev. E, 21-Aug-17 Document Number: 91628 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHA25N50E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.59 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 500 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 400 V, V = 0 V, T = 125 C - - 25 DS GS J Drain-source on-state resistance R V = 10 V I = 12 A - 0.125 0.145 DS(on) GS D Forward transconductance g V = 30 V, I = 12 A - 6.6 - S fs DS D Dynamic Input capacitance C V = 0 V, - 1980 - iss GS Output capacitance C -V = 100 V, 105- oss DS f = 1 MHz Reverse transfer capacitance C -8- rss pF Effective output capacitance, energy C - 105 - o(er) a related V = 0 V to 400 V, V = 0 V DS GS Effective output capacitance, time C - 285 - o(tr) b related Total gate charge Q -57 86 g Gate-source charge Q -1V = 10 V I = 12 A, V = 400 V 4- nC gs GS D DS Gate-drain charge Q -25- gd Turn-on delay time t -19 38 d(on) Rise time t -36 72 r V = 400 V, I = 12 A DD D ns R = 9.1 , V = 10 V Turn-off delay time t -5g GS 786 d(off) Fall time t -2958 f Gate input resistance R f = 1 MHz, open drain - 0.56 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 12 S showing the A G integral reverse Pulsed diode forward current I S -- 50 SM p - n junction diode Diode forward voltage V T = 25 C, I = 16.5 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 338 - ns rr T = 25 C, I = I , J F S Reverse recovery charge Q -5.3 - C rr dI/dt = 100 A/s, V = 25 V R Reverse recovery current I -29 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S17-1308-Rev. E, 21-Aug-17 Document Number: 91628 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000