SiHB6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) R x Q on g V (V) at T max. 700 DS J Low input capacitance (C ) iss R max. at 25 C ()V = 10 V 0.6 DS(on) GS Reduced switching and conduction losses Q max. (nC) 48 g Ultra low gate charge (Q ) g Q (nC) 6 gs Avalanche energy rated (UIS) Q (nC) 11 gd Material categorization: for definitions of compliance Configuration Single please see www.vishay.com/doc 99912 APPLICATIONS D Server and telecom power supplies 2 D PAK (TO-263) Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting G - High-intensity discharge (HID) - Fluorescent ballast lighting D G Industrial S S - Welding N-Channel MOSFET - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION 2 Package D PAK (TO-263) Lead (Pb)-free and Halogen-free SiHB6N65E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 650 DS V Gate-Source Voltage V 30 GS T = 25 C 7 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 5 A C a Pulsed Drain Current I 18 DM Linear Derating Factor 0.63 W/C b Single Pulse Avalanche Energy E 56 mJ AS Maximum Power Dissipation P 78 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 37 J dV/dt V/ns d Reverse Diode dV/dt 27 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 2 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S15-0399-Rev. B, 16-Mar-15 Document Number: 91544 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHB6N65E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) -1.6 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 650 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.73 - V/C DS J DS D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 650 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 520 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 3 A - 0.5 0.6 DS(on) GS D Forward Transconductance g V = 30 V, I = 3 A - 2 - S fs DS D Dynamic Input Capacitance C - 820 - iss V = 0 V, GS Output Capacitance C -4V = 100 V, 0- oss DS f = 1 MHz Reverse Transfer Capacitance C -4- rss pF Effective Output Capacitance, Energy C -36 - o(er) a Related V = 0 V to 520 V, V = 0 V DS GS Effective Output Capacitance, Time C - 117 - b o(tr) Related Total Gate Charge Q -24 48 g Gate-Source Charge Q -6V = 10 V I = 3 A, V = 520 V- nC gs GS D DS Gate-Drain Charge Q -11- gd Turn-On Delay Time t -14 28 d(on) Rise Time t -12 24 r V = 520 V, I = 3 A, DD D ns Turn-Off Delay Time t -3V = 10 V, R = 9.1 060 d(off) GS g Fall Time t -2040 f Gate Input Resistance R f = 1 MHz, open drain - 1.4 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 7 S showing the A G integral reverse Pulsed Diode Forward Current I S -- 18 SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 3 A, V = 0 V - - 1.3 V SD J S GS Reverse Recovery Time t - 237 - ns rr T = 25 C, I = I = 3 A, J F S Reverse Recovery Charge Q -2.2 - C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I -16 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S15-0399-Rev. B, 16-Mar-15 Document Number: 91544 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000