SiHG21N65EF www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series V (V) at T max. 700 DS J technology R max. at 25 C ()V = 10 V 0.18 , Q , and I Reduced t DS(on) GS rr rr RRM Low figure-of-merit (FOM) R x Q Q max. (nC) 106 on g g Low input capacitance (C ) iss Q (nC) 14 gs Low switching losses due to reduced Q rr Q (nC) 33 gd Ultra low gate charge (Q ) g Configuration Single Avalanche energy rated (UIS) Material categorization: for definitions of compliance D please see www.vishay.com/doc 99912 APPLICATIONS TO-247AC Telecommunications - Server and telecom power supplies G Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting S Consumer and computing S D - ATX power supplies N-Channel MOSFET G Industrial - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power supplies (SMPS) Applications using the following topologies - LCC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and Halogen-free SiHG21N65EF-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 650 DS V Gate-Source Voltage V 30 GS T = 25 C 21 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 13 A C a Pulsed Drain Current I 53 DM Linear Derating Factor 1.7 W/C b Single Pulse Avalanche Energy E 367 mJ AS Maximum Power Dissipation P 208 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 37 J dV/dt V/ns d Reverse Diode dV/dt 31 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 5.1 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S15-2686-Rev. A, 16-Nov-15 Document Number: 91607 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG21N65EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA C/W Maximum Junction-to-Case (Drain) -0.5 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 650 - - V DS GS D V /T -0.67 - V Temperature Coefficient Reference to 25 C, I = 1 mA V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 520 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 520 V, V = 0 V, T = 125 C - - 500 DS GS J Drain-Source On-State Resistance R V = 10 V I = 11 A - 0.15 0.18 DS(on) GS D Forward Transconductance g V = 30 V, I = 11 A - 7.0 - S fs DS D Dynamic Input Capacitance C - 2322 - iss V = 0 V, GS Output Capacitance C -V = 100 V, 105- oss DS f = 1 MHz Reverse Transfer Capacitance C -4- rss pF Effective Output Capacitance, Energy C -84 - a o(er) Related V = 0 V to 520 V, V = 0 V DS GS Effective Output Capacitance, Time C - 293 - o(tr) b Related Total Gate Charge Q -71 106 g Gate-Source Charge Q -1V = 10 V I = 11 A, V = 520 V4- nC gs GS D DS Gate-Drain Charge Q -33- gd Turn-On Delay Time t -22 44 d(on) Rise Time t -34 68 r V = 520 V, I = 11 A, DD D ns V = 10 V, R = 9.1 Turn-Off Delay Time t -6GS g 8102 d(off) Fall Time t -4284 f Gate Input Resistance R f = 1 MHz, open drain - 0.78 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 21 S showing the A G integral reverse Pulsed Diode Forward Current I -- 53 S SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 11 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse Recovery Time t - 160 - ns rr T = 25 C, I = I = 11 A, J F S Reverse Recovery Charge Q -1.2 - C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I -14 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S15-2686-Rev. A, 16-Nov-15 Document Number: 91607 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000