SiHG28N65EF www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series V (V) at T max. 700 technology DS J Reduced t , Q , and I R typ. () at 25 C V = 10 V 0.102 rr rr RRM DS(on) GS Low figure-of-merit (FOM): R x Q on g Q max. (nC) 146 g Low input capacitance (C ) iss Q (nC) 21 gs Low switching losses due to reduced Q rr Q (nC) 43 gd Ultra low gate charge (Q ) g Configuration Single Avalanche energy rated (UIS) Material categorization: for definitions of compliance D please see www.vishay.com/doc 99912 TO-247AC APPLICATIONS Telecommunications - Server and telecom power supplies G Lighting - High intensity discharge (HID) S - Light emitting diodes (LEDs) D S Consumer and computing G - ATX power supplies N-Channel MOSFET Industrial - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power suppliers (SMPS) Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and halogen-free SiHG28N65EF-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 650 DS V Gate-source voltage V 30 GS T = 25 C 28 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 18 A C a Pulsed drain current I 87 DM Linear derating factor 2W/C b Single pulse avalanche Energy E 427 mJ AS Maximum power dissipation P 250 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dV/dt V/ns d Reverse diode dV/dt 11 c Soldering recommendations (peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 5.5 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J S18-0016-Rev. B, 15-Jan-18 Document Number: 91708 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG28N65EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum junction-to-ambient R -62 thJA C/W Maximum junction-to-case (drain) R -0.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 650 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 10 mA - 0.74 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 520 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 520 V, V = 0 V, T = 125 C - - 500 DS GS J Drain-source on-state resistance R V = 10 V I = 14 A - 0.102 0.117 DS(on) GS D a Forward transconductance g V = 30 V, I = 14 A - 11 - S fs DS D Dynamic Input capacitance C - 3249 - iss V = 0 V, GS Output capacitance C -V = 100 V, 145- oss DS f = 1 MHz Reverse transfer capacitance C -5- rss pF Effective output capacitance, energy C - 105 - o(er) a related V = 0 V, V = 0 V to 520 V GS DS b Effective output capacitance, time related C - 441 - o(tr) Total gate charge Q - 97 146 g Gate-source charge Q -2V = 10 V I = 14 A, V = 520 V 1- nC gs GS D DS Gate-drain charge Q -43- gd Turn-on delay time t -29 58 d(on) Rise time t -44 88 r V = 520 V, I = 14 A DD D ns R = 9.1 , V = 10 V Turn-off delay time t -g GS 93140 d(off) Fall time t -51102 f Gate input resistance R f = 1 MHz, open drain 0.25 0.5 1.0 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 28 S showing the A G integral reverse Pulsed diode forward current I -- 87 SM p - n junction diode S Diode forward voltage V T = 25 C, I = 11 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse recovery time t - 174 308 ns rr T = 25 C, I = I = 14 A, J F S Reverse recovery charge Q -1.1 2.4 C rr dI/dt = 100 A/s, V = 400 V R Reverse recovery current I -15 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DS b. C is a fixed capacitance that gives the charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DS S18-0016-Rev. B, 15-Jan-18 Document Number: 91708 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000