SiHG33N65EF www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series V (V) at T max. 700 technology DS J Reduced t , Q , and I R typ. () at 25 C V = 10 V 0.095 rr rr RRM DS(on) GS Low figure-of-merit (FOM): R x Q on g Q max. (nC) 171 g Low input capacitance (C ) iss Q (nC) 25 gs Low switching losses due to reduced Q rr Q (nC) 45 gd Ultra low gate charge (Q ) g Configuration Single Avalanche energy rated (UIS) Material categorization: for definitions of compliance D please see www.vishay.com/doc 99912 TO-247AC APPLICATIONS Telecommunications - Server and telecom power supplies G Lighting - High intensity discharge (HID) S - Light emitting diodes (LEDs) D S Consumer and computing G - ATX power supplies N-Channel MOSFET Industrial - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power suppliers (SMPS) Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package TO-247AC Lead (Pb)-Free and Halogen-Free SiHG33N65EF-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 650 DS V Gate-Source Voltage V 30 GS T = 25 C 31.6 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 20 A C a Pulsed Drain Current I 93 DM Linear Derating Factor 2.5 W/C b Single Pulse Avalanche Energy E 508 mJ AS Maximum Power Dissipation P 313 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 70 J dV/dt V/ns d Reverse Diode dV/dt 9 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 6.0 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S16-0002-Rev. B, 11-Jan-16 Document Number: 91717 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG33N65EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum Junction-to-Ambient R -40 thJA C/W Maximum Junction-to-Case (Drain) R -0.4 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 650 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 10 mA - 0.89 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 520 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 520 V, V = 0 V, T = 125 C - - 500 DS GS J Drain-Source On-State Resistance R V = 10 V I = 16.5 A - 0.095 0.109 DS(on) GS D a Forward Transconductance g V = 30 V, I = 16.5 A - 11 - S fs DS D Dynamic Input Capacitance C - 4026 - iss V = 0 V, GS Output Capacitance C -V = 100 V, 135- oss DS f = 1 MHz Reverse Transfer Capacitance C -16- rss pF Effective Output Capacitance, Energy C - 100 - a o(er) related V = 0 V, V = 0 V to 520 V GS DS Effective Output Capacitance, Time C - 424 - o(tr) b Related Total Gate Charge Q - 114 171 g Gate-Source Charge Q -2V = 10 V I = 16.5 A, V = 520 V 5- nC gs GS D DS Gate-Drain Charge Q -45- gd Turn-On Delay Time t -32 64 d(on) Rise Time t -56 84 r V = 520 V, I = 16.5 A DD D ns R = 9.1 , V = 10 V Turn-Off Delay Time t -g GS 105107 d(off) Fall Time t -71- f Gate Input Resistance R f = 1 MHz, open drain 0.25 0.5 1.0 g Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I - - 31.6 S showing the A G integral reverse Pulsed Diode Forward Current I -- 93 SM S p - n junction diode Diode Forward Voltage V T = 25 C, I = 16.5 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse Recovery Time t - 179 - ns rr T = 25 C, I = I = 16.5 A, J F S Reverse Recovery Charge Q -1.18 - C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I - 12.6 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DS b. C is a fixed capacitance that gives the charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DS S16-0002-Rev. B, 11-Jan-16 Document Number: 91717 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000