SiHG40N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) R x Q on g V (V) at T max. 650 DS J Low input capacitance (C ) iss R typ. () at 25 C V = 10 V 0.065 DS(on) GS Reduced switching and conduction losses Q max. (nC) 197 g Q (nC) 33 Ultra low gate charge (Q ) g gs Q (nC) 54 gd Avalanche energy rated (UIS) Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS D Server and telecom power supplies TO-247AC Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) G Lighting - High-intensity discharge (HID) S - Fluorescent ballast lighting D S G Industrial N-Channel MOSFET - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and Halogen-free SiHG40N60E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 40 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 26 A C a Pulsed Drain Current I 123 DM Linear Derating Factor 2.63 W/C b Single Pulse Avalanche Energy E 691 mJ AS Maximum Power Dissipation P 329 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 70 J dV/dt V/ns d Reverse Diode dV/dt 4.5 c Soldering Recommendations (Peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S16-0659-Rev. A, 18-Apr-16 Document Number: 91802 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG40N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA C/W Maximum Junction-to-Case (Drain) R -0.38 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.70 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 20 A - 0.065 0.075 DS(on) GS D Forward Transconductance g V = 30 V, I = 20 A - 13.5 - S fs DS D Dynamic Input Capacitance C - 4436 - iss V = 0 V, GS Output Capacitance C -V = 100 V, 208- oss DS f = 1 MHz Reverse Transfer Capacitance C -6- rss pF Effective Output Capacitance, Energy C - 126 - a o(er) Related V = 0 V to 480 V, V = 0 V DS GS Effective Output Capacitance, Time C - 542 - o(tr) b Related Total Gate Charge Q - 131 197 g Gate-Source Charge Q -3V = 10 V I = 20 A, V = 480 V3- nC gs GS D DS Gate-Drain Charge Q -54- gd Turn-On Delay Time t -35 70 d(on) Rise Time t -71 107 r V = 480 V, I = 20 A, DD D ns V = 10 V, R = 9.1 Turn-Off Delay Time t -GS g 127191 d(off) Fall Time t -6699 f Gate Input Resistance R f = 1 MHz, open drain 0.3 0.6 1.2 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 40 S showing the A integral reverse G p - n junction diode Pulsed Diode Forward Current I -- 123 SM S Diode Forward Voltage V T = 25 C, I = 6.5 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 595 1190 ns rr T = 25 C, I = I = 20 A, J F S Reverse Recovery Charge Q - 9.9 19.8 C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I -26 52 A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . o(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . o(tr) oss DS DSS S16-0659-Rev. A, 18-Apr-16 Document Number: 91802 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000