SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY Generation one V (V) at T max. 650 DS J Low figure-of-merit R x Q on g R max. at 25 C ()V = 10 V 0.07 DS(on) GS 100 % avalanche tested Q max. (nC) 216 g Q (nC) 39 Ultra low gate charge gs Q (nC) 57 gd Ultra low R on Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D TO-247AC APPLICATIONS PFC power supply stages Hard switching topologies G Solar inverters UPS S D Motor control S G Server telecom N-Channel MOSFET ORDERING INFORMATION Package TO-247AC Lead (Pb)-free SiHG47N60S-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 47 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 30 A C a Pulsed Drain Current I 140 DM Linear Derating Factor 3.3 W/C Avalanche Energy (repetitive) E 0.42 AR mJ b Single Pulse Avalanche Energy E 1800 AS Maximum Power Dissipation P 417 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 37 J dV/dt V/ns d Reverse Diode dV/dt 8.5 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 73.5 mH, R = 25 , I = 7 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S15-0983-Rev. F, 27-Apr-15 Document Number: 91341 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG47N60S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA C/W Maximum Junction-to-Case (Drain) R -0.3 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.7 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2- 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V -- 1 A GS V = 600 V, V = 0 V -- 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 600 V, V = 0 V, T = 150 C -- 10 DS GS J R V = 10 V I = 24 A Drain-Source On-State Resistance - 0.057 0.07 DS(on) GS D a g V = 8 V, I = 3 A -7.5 - S Forward Transconductance fs DS D Dynamic Input Capacitance C -6630- iss V = 0 V, GS Output Capacitance C V = 100 V, -220 - oss pF DS f = 1 MHz C Reverse Transfer Capacitance -7 - rss Q Total Gate Charge - 180 216 g Gate-Source Charge Q V = 10 V I = 20 A, V = 400 V -39- nC gs GS D DS Gate-Drain Charge Q -57- gd t Turn-On Delay Time -30 60 d(on) Rise Time t -12 25 r V = 380 V, I = 47 A, DD D ns R = 4.4 , V = 13 V Turn-Off Delay Time t g GS - 115 175 d(off) Fall Time t -9 20 f R Gate Input Resistance f = 1 MHz, open drain - 0.62 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- S 47 showing the A G integral reverse Pulsed Diode Forward Current I -- SM 140 S p - n junction diode Body Diode Voltage V T = 25 C, I = 47 A, V = 0 V -- 1.2 V SD J S GS Body Diode Reverse Recovery Time t - 750 1125 ns rr T = 25 C, I = I , dI/dt = 100 A/s, J F S Q Body Diode Reverse Recovery Charge -18 36 C rr V = 25 V R I Body Diode Reverse Recovery Current -39 80 A RRM Note a. C (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss eff. oss DS DS S15-0983-Rev. F, 27-Apr-15 Document Number: 91341 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000