SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D TO-247AC Low figure-of-merit (FOM) R x Q on g Low input capacitance (C ) iss Reduced switching and conduction losses G Ultra low gate charge (Q ) g Available S Avalanche energy rated (UIS) D G Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 N-Channel MOSFET APPLICATIONS Switch mode power supplies (SMPS) PRODUCT SUMMARY Power factor correction power supplies (PFC) V (V) at T max. 650 DS J Lighting R max. () at 25 C V = 10 V 0.064 DS(on) GS - High-intensity discharge (HID) Q max. (nC) 220 g - Fluorescent ballast lighting Q (nC) 29 gs Industrial Q (nC) 57 gd - Welding Configuration Single - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package TO-247AC Lead (Pb)-free SiHG47N60E-E3 Lead (Pb)-free and halogen-free SiHG47N60E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 47 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 30 A C a Pulsed drain current I 145 DM Linear derating factor 3W/C b Single pulse avalanche energy E 1800 mJ AS Maximum power dissipation P 357 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope V = 0 V to 80 % V 70 DS DS dV/dt V/ns d Reverse diode dV/dt 11 c Soldering recommendations (peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 73.5 mH, R = 25 , I = 7 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J S17-1097-Rev. N, 24-Jul-17 Document Number: 91474 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG47N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -40 thJA C/W Maximum junction-to-case (drain) -0.33 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 250 A - 0.66 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 24 A - 0.053 0.064 DS(on) GS D Forward transconductance g V = 8 V, I = 3 A - 6.8 - S fs DS D Dynamic Input capacitance C 2405 4810 9620 iss V = 0 V, GS Output capacitance C 115V = 100 V, 230460 oss DS f = 1 MHz Reverse transfer capacitance C 1.7510 rss pF Effective output capacitance, energy C - 170 - a o(er) related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C - 604 - o(tr) b related Total gate charge Q 74 148 220 g Gate-source charge Q 14.5V = 10 V I = 24 A, V = 480 V2958 nC gs GS D DS Gate-drain charge Q 28.55786 gd Turn-on delay time t 14 28 56 d(on) Rise time t 36 72 108 r V = 480 V, I = 24 A, DD D ns V = 10 V, R = 4.4 Turn-off delay time t 47GS g 93140 d(off) Fall time t 4182123 f Gate input resistance R f = 1 MHz, open drain 0.13 0.65 1.3 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 47 S showing the A G integral reverse Pulsed diode forward current I -- 140 S SM p - n junction diode Diode forward voltage V T = 25 C, I = 24 A, V = 0 V - - 1.2 V SD J S GS Body diode reverse recovery time t - 582 1164 ns rr T = 25 C, I = I = 24 A, J F S Body diode reverse recovery charge Q -11 22 C rr dI/dt = 100 A/s, V = 25 V R Reverse recovery current I -31 62 A RRM Body diode reverse recovery time t - 550 1164 ns rr T = 25 C, I = I = 24 A, J F S Body diode reverse recovery charge Q - 10.7 22 C rr dI/dt = 100 A/s, V = 400 V R Reverse recovery current I -38 62 A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S17-1097-Rev. N, 24-Jul-17 Document Number: 91474 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000