SiHG35N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY 2 A specific on resistance (m -cm ) reduction of V (V) at T max. 650 DS J 25 % R typ. () at 25 C V = 10 V 0.082 DS(on) GS Low figure-of-merit (FOM) R x Q on g Q max. (nC) 132 g Low input capacitance (C ) iss Q (nC) 22 gs Reduced switching and conduction losses Q (nC) 46 gd Ultra low gate charge (Q ) g Configuration Single Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D TO-247AC APPLICATIONS Power factor correction power supplies (PFC) Hard switching PWM stages Computing G - Switch mode power supplies (SMPS) Lighting S D - Light emitting diode (LED) G S - High intensity discharge (HID) Telecom N-Channel MOSFET - Server power supplies Renewable energy - Photovoltaic inverters Industrial - Welding - Induction heating - Motor drives - Battery chargers - Uniterruptable power supplies ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and Halogen-free SiHG35N60E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 32 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 20 A C a Pulsed Drain Current I 80 DM Linear Derating Factor 2W/C b Single Pulse Avalanche Energy E 691 mJ AS Maximum Power Dissipation P 250 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 57 J dV/dt V/ns d Reverse Diode dV/dt 31 c Soldering Recommendations (Peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S16-1262-Rev. A, 27-Jun-16 Document Number: 91855 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG35N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) -0.5 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.70 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 25 DS GS J Drain-Source On-State Resistance R V = 10 V I = 17 A - 0.082 0.094 DS(on) GS D Forward Transconductance g V = 30 V, I = 17 A - 13 - S fs DS D Dynamic Input Capacitance C - 2760 - iss V = 0 V, GS Output Capacitance C -V = 100 V, 118- oss DS f = 1 MHz Reverse Transfer Capacitance C -5- rss pF Effective Output Capacitance, Energy C - 118 - o(er) a Related V = 0 V to 480 V, V = 0 V DS GS Effective Output Capacitance, Time C - 429 - o(tr) b Related Total Gate Charge Q -88 132 g Gate-Source Charge Q -2V = 10 V I = 17 A, V = 480 V2- nC gs GS D DS Gate-Drain Charge Q -46- gd Turn-On Delay Time t -29 58 d(on) Rise Time t -61 92 r V = 480 V, I = 17 A, DD D ns V = 10 V, R = 9.1 Turn-Off Delay Time t -7GS g 8117 d(off) Fall Time t -3264 f Gate Input Resistance R f = 1 MHz, open drain 0.25 0.5 1 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 32 S showing the A G integral reverse S Pulsed Diode Forward Current I -- 80 SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 17 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse Recovery Time t - 455 910 ns rr T = 25 C, I = I = 17 A, J F S Reverse Recovery Charge Q -8 16 C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I -30 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S16-1262-Rev. A, 27-Jun-16 Document Number: 91855 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000