X-On Electronics has gained recognition as a prominent supplier of SIHF30N60E-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHF30N60E-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHF30N60E-GE3 Vishay

SIHF30N60E-GE3 electronic component of Vishay
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Part No.SIHF30N60E-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 600V 125mOhms10V 29A N-Ch E-SRS
Datasheet: SIHF30N60E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.647 ea
Line Total: USD 6.65 
Availability - 1333
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1333
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 6.647
10 : USD 4.6805
25 : USD 4.1745
100 : USD 3.45
250 : USD 3.4385
500 : USD 3.1625
2000 : USD 3.1165
5000 : USD 3.082

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
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Subcategory
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Typical Turn-On Delay Time
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We are delighted to provide the SIHF30N60E-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHF30N60E-GE3 and other electronic components in the MOSFETs category and beyond.

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SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) R x Q on g V (V) at T max. 650 DS J Low input capacitance (C ) iss R max. at 25 C ()V = 10 V 0.125 DS(on) GS Reduced switching and conduction losses Q max. (nC) 130 g Ultra low gate charge (Q ) g Q (nC) 15 gs Available Avalanche energy rated (UIS) Q (nC) 39 gd Material categorization: for definitions of compliance Configuration Single please see www.vishay.com/doc 99912 D TO-220 FULLPAK APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) G Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting S S D G - LED lighting N-Channel MOSFET Industrial - Welding - Induction heating - Motor drives Battery chargers Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free and Halogen-free SiHF30N60E-GE3 Lead (Pb)-free SiHF30N60E-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 29 C d Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 18 A C a Pulsed Drain Current I 76 DM Linear Derating Factor 0.29 W/C b Single Pulse Avalanche Energy E 690 mJ AS Maximum Power Dissipation P 37 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope V = 0 V to 80 % V 70 DS DS dV/dt V/ns e Reverse Diode dV/dt 18 c Soldering Recommendations (Peak temperature) for 10 s 300 C Mounting Torque M3 screw 0.6 Nm Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7 A. DD J g AS c. 1.6 mm from case. d. Limited by maximum junction temperature. e. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S16-1084-Rev. I, 06-Jun-16 Document Number: 91454 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHF30N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -65 thJA C/W Maximum Junction-to-Case (Drain) -3.4 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V /T -0.64 - V Temperature Coefficient Reference to 25 C, I = 250 A V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 2.8 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 600 V, V = 0 V, T = 150 C - - 100 DS GS J Drain-Source On-State Resistance R V = 10 V I = 15 A - 0.104 0.125 DS(on) GS D a Forward Transconductance g V = 8 V, I = 3 A - 5.4 - S fs DS D Dynamic Input Capacitance C - 2600 - iss V = 0 V, GS Output Capacitance C -V = 100 V, 138- oss DS f = 1.0 MHz Reverse Transfer Capacitance C -3- rss pF Effective Output Capacitance, Energy C -98 - a o(er) Related V = 0 V to 480 V, V = 0 V DS GS Effective Output Capacitance, Time C - 346 - o(tr) b Related Total Gate Charge Q -85 130 g Gate-Source Charge Q -1V = 10 V I = 15 A, V = 480 V5- nC gs GS D DS Gate-Drain Charge Q -39- gd Turn-On Delay Time t -19 40 d(on) Rise Time t -32 65 r V = 380 V, I = 15 A, DD D ns Turn-Off Delay Time t -6395 V = 10 V, R = 4.7 d(off) GS g Fall Time t -3675 f Gate Input Resistance R f = 1 MHz, open drain - 0.63 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 29 S showing the A G integral reverse Pulsed Diode Forward Current I -- 65 S SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 15 A, V = 0 V - - 1.3 V SD J S GS Body Diode Reverse Recovery Time t - 402 605 ns rr T = 25 C, I = I = 15 A, J F S Body Diode Reverse Recovery Charge Q -7 15 C rr dI/dt = 100 A/s, V = 20 V R Reverse Recovery Current I -32 65 A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S16-1084-Rev. I, 06-Jun-16 Document Number: 91454 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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