X-On Electronics has gained recognition as a prominent supplier of SIHF540S-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHF540S-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHF540S-GE3 Vishay

SIHF540S-GE3 electronic component of Vishay
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Part No.SIHF540S-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 100 V 28A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D²PAK (TO-263)
Datasheet: SIHF540S-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.863 ea
Line Total: USD 1.86 
Availability - 383
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
383
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 1.863
10 : USD 1.5295
100 : USD 1.196
500 : USD 1.0051
1000 : USD 0.8176
2000 : USD 0.8096

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SIHF540S-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHF540S-GE3 and other electronic components in the MOSFETs category and beyond.

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IRF540S, SiHF540S www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount 2 Available in tape and reel D PAK (TO-263) Dynamic dv/dt rating Available Repetitive avalanche rated G 175 C operating temperature Available Fast switching D Ease of paralleling G S S Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 N-Channel MOSFET Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For PRODUCT SUMMARY example, parts with lead (Pb) terminations are not RoHS-compliant. V (V) 100 Please see the information / tables in this datasheet for details DS R ( )V = 10 V 0.077 DS(on) GS DESCRIPTION Q max. (nC) 72 g Third generation power MOSFETs from Vishay provide the Q (nC) 11 gs designer with the best combination of fast switching, (nC) 32 Q gd ruggedized device design, low on-resistance and Configuration Single cost-effectiveness. 2 The D PAK (TO-263) is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The 2 D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and halogen-free SiHF540S-GE3 SiHF540STRL-GE3 SiHF540STRR-GE3 a a Lead (Pb)-free IRF540SPbF IRF540STRLPbF IRF540STRRPbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 100 DS V Gate-source voltage V 20 GS T = 25 C 28 C Continuous drain current V at 10 V I GS D T = 100 C 20 A C a Pulsed drain current I 110 DM Linear derating factor 1.0 W/C e Linear derating factor (PCB mount) 0.025 b Single pulse avalanche energy E 230 mJ AS a Avalanche current I 28 A AR a Repetitive avalanche energy E 15 mJ AR Maximum power dissipation T = 25 C 150 C P W D e Maximum power dissipation (PCB mount) T = 25 C 3.7 A c Peak diode recovery dv/dt dv/dt 5.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d Soldering recommendations (peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 440 H, R = 25 , I = 28 A (see fig. 12) DD J g AS c. I 28 A, di/dt 170 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S20-0683-Rev. E, 07-Sep-2020 Document Number: 91022 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF540S, SiHF540S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Maximum junction-to-ambient R -40 C/W thJA a (PCB mount) Maximum junction-to-case (drain) R -1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.13 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 80 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 17 A - - 0.077 DS(on) GS D b Forward transconductance g V = 50 V, I = 17 A 8.7 - - S fs DS D Dynamic Input capacitance C - 1700 - iss V = 0 V, GS Output capacitance C -V = 25 V, 560- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -120- rss Total gate charge Q -- 72 g I = 17 A, V = 80 V, D DS Gate-source charge Q --V = 10 V 11 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --32 gd Turn-on delay time t -11 - d(on) Rise time t -44 - r V = 50 V, I = 17 A, DD D ns b R = 9.1 , R = 2.9 , see fig. 10 Turn-off delay time t -5g D 3- d(off) Fall time t -43- f Gate input resistance R f = 1 MHz, open drain 0.5 - 3.6 g D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L -7.5 - die contact S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- 28 S showing the A G integral reverse a Pulsed diode forward current I -- 110 S SM p - n junction diode b Body diode voltage V T = 25 C, I = 28 A, V = 0 V -- 2.5 V SD J S GS Body diode reverse recovery time t - 180 360 ns rr b T = 25 C, I = 17 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -1.3 2.8 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S20-0683-Rev. E, 07-Sep-2020 Document Number: 91022 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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