IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S Surface-mount Available in tape and reel Dynamic dV/dt rating SOT-223 G Repetitive avalanche rated D P-channel Available Fast switching S Ease of paralleling D G Material categorization: for definitions of compliance D please see www.vishay.com/doc 99912 P-Channel MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the Marking code: FE designer with the best combination of fast switching, ruggedized device design, low on-resistance, and PRODUCT SUMMARY cost-effectiveness. The SOT-223 package is designed for surface-mounting V (V) -60 DS using vapor phase, infrared, or wave soldering techniques. R ( )V = -10 V 0.50 DS(on) GS Its unique package design allows for easy automatic Q (Max.) (nC) 12 pick-and-place as with other SOT or SOIC packages bu t g has the added advantage of improved thermal performance Q (nC) 3.8 gs due to an enlarged tab for heatsinking. Power dissipation of Q (nC) 5.1 gd greater than 1.25 W is possible in a typical surface moun t application. Configuration Single ORDERING INFORMATION Package SOT-223 SiHFL9014TR-GE3 Lead (Pb)-free and halogen-free a, b IRFL9014TRPbF-BE3 a Lead (Pb)-free IRFL9014TRPbF Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -60 DS V Gate-source voltage V 20 GS T = 25 C -1.8 C Continuous drain current V at -10 V I GS D T = 100 C -1.1 A C a Pulsed drain current I -14 DM Linear derating factor 0.025 W/C e Linear derating factor (PCB mount) 0.017 b Single pulse avalanche energy E 140 mJ AS a Avalanche current I -1.8 A AR a Repetitive avalanche energy E 0.31 mJ AR Maximum power dissipation T = 25 C 3.1 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.0 A c Peak diode recovery dv/dt dV/dt -4.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = - 25 V, starting T = 25 C, L = 50 mH, R = 25 , I = - 1.8 A (see fig. 12) DD J g AS c. I - 6.7 A, dI/dt 90 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0322-Rev. G, 05-Apr-2021 Document Number: 91195 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -60 thJA a (PCB mount) C/W Maximum junction-to-case (drain) R -40 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A -60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - -0.059 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A -2.0 - -4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = -60 V, V = 0 V - - - 100 DS GS Zero gate voltage drain current I A DSS V = -48 V, V = 0 V, T = 125 C - - -500 DS GS J b Drain-source on-state resistance R V = -10 V I = 1.1 A - - 0.50 DS(on) GS D b Forward transconductance g V = - 25 V, I = 1.1 A 1.3 - - S fs DS D Dynamic Input capacitance C - 270 - iss V = 0 V, GS Output capacitance C -V = 25 V, 170- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -31- rss Total gate charge Q -- 12 g I = - 6.7 A, V = - 48 V, D DS Gate-source charge Q --V = - 10 V 3.8 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --5.1 gd Turn-on delay time t -11 - d(on) Rise time t -63 - r V = - 30 V, I = - 6.7 A, DD D ns b R = 24 , R = 4.0 , see fig. 10 g D Turn-off delay time t -9.6- d(off) Fall time t -31- f D Between lead, Internal drain inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- - 1.8 S showing the A integral reverse G a Pulsed diode forward current I p - n junction diode -- - 14 SM S b Body diode voltage V T = 25 C, I = - 1.8 A, V = 0 V -- - 5.5 V SD J S GS Body diode reverse recovery time t - 80 160 ns rr b T = 25 C, I = - 6.7 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 0.096 0.19 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0322-Rev. G, 05-Apr-2021 Document Number: 91195 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000