X-On Electronics has gained recognition as a prominent supplier of SIHFL9014TR-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHFL9014TR-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHFL9014TR-GE3 Vishay

SIHFL9014TR-GE3 electronic component of Vishay
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Part No.SIHFL9014TR-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 60 V 1.8A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Datasheet: SIHFL9014TR-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8272 ea
Line Total: USD 0.83 
Availability - 57264
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
57264
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8272
10 : USD 0.5555
100 : USD 0.4004
500 : USD 0.3553
1000 : USD 0.3102
2500 : USD 0.2904
5000 : USD 0.286
10000 : USD 0.2772
25000 : USD 0.275

   
Manufacturer
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Hts Code
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SIHFL9014TR-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHFL9014TR-GE3 and other electronic components in the MOSFETs category and beyond.

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IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S Surface-mount Available in tape and reel Dynamic dV/dt rating SOT-223 G Repetitive avalanche rated D P-channel Available Fast switching S Ease of paralleling D G Material categorization: for definitions of compliance D please see www.vishay.com/doc 99912 P-Channel MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the Marking code: FE designer with the best combination of fast switching, ruggedized device design, low on-resistance, and PRODUCT SUMMARY cost-effectiveness. The SOT-223 package is designed for surface-mounting V (V) -60 DS using vapor phase, infrared, or wave soldering techniques. R ( )V = -10 V 0.50 DS(on) GS Its unique package design allows for easy automatic Q (Max.) (nC) 12 pick-and-place as with other SOT or SOIC packages bu t g has the added advantage of improved thermal performance Q (nC) 3.8 gs due to an enlarged tab for heatsinking. Power dissipation of Q (nC) 5.1 gd greater than 1.25 W is possible in a typical surface moun t application. Configuration Single ORDERING INFORMATION Package SOT-223 SiHFL9014TR-GE3 Lead (Pb)-free and halogen-free a, b IRFL9014TRPbF-BE3 a Lead (Pb)-free IRFL9014TRPbF Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -60 DS V Gate-source voltage V 20 GS T = 25 C -1.8 C Continuous drain current V at -10 V I GS D T = 100 C -1.1 A C a Pulsed drain current I -14 DM Linear derating factor 0.025 W/C e Linear derating factor (PCB mount) 0.017 b Single pulse avalanche energy E 140 mJ AS a Avalanche current I -1.8 A AR a Repetitive avalanche energy E 0.31 mJ AR Maximum power dissipation T = 25 C 3.1 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.0 A c Peak diode recovery dv/dt dV/dt -4.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = - 25 V, starting T = 25 C, L = 50 mH, R = 25 , I = - 1.8 A (see fig. 12) DD J g AS c. I - 6.7 A, dI/dt 90 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0322-Rev. G, 05-Apr-2021 Document Number: 91195 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -60 thJA a (PCB mount) C/W Maximum junction-to-case (drain) R -40 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A -60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - -0.059 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A -2.0 - -4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = -60 V, V = 0 V - - - 100 DS GS Zero gate voltage drain current I A DSS V = -48 V, V = 0 V, T = 125 C - - -500 DS GS J b Drain-source on-state resistance R V = -10 V I = 1.1 A - - 0.50 DS(on) GS D b Forward transconductance g V = - 25 V, I = 1.1 A 1.3 - - S fs DS D Dynamic Input capacitance C - 270 - iss V = 0 V, GS Output capacitance C -V = 25 V, 170- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -31- rss Total gate charge Q -- 12 g I = - 6.7 A, V = - 48 V, D DS Gate-source charge Q --V = - 10 V 3.8 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --5.1 gd Turn-on delay time t -11 - d(on) Rise time t -63 - r V = - 30 V, I = - 6.7 A, DD D ns b R = 24 , R = 4.0 , see fig. 10 g D Turn-off delay time t -9.6- d(off) Fall time t -31- f D Between lead, Internal drain inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- - 1.8 S showing the A integral reverse G a Pulsed diode forward current I p - n junction diode -- - 14 SM S b Body diode voltage V T = 25 C, I = - 1.8 A, V = 0 V -- - 5.5 V SD J S GS Body diode reverse recovery time t - 80 160 ns rr b T = 25 C, I = - 6.7 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 0.096 0.19 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0322-Rev. G, 05-Apr-2021 Document Number: 91195 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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