DMT36M1LPS Green N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low R Minimizes On-State Losses DS(ON) I Max D Excellent Q x R Product (FOM) gd DS(ON) BV R Max DSS DS(ON) T = +25C C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m V = 10V 65A GS Density End Products 30V 9.8m V = 4.5V 55A 100% Unclamped Inductive Switching Ensures More Reliability GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: PowerDI 5060-8 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 S D S Pin1 D D S G D Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMT36M1LPS-13 2,500/Tape & Reel PowerDI5060-8 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMT36M1LPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS T = +25C 16 A Continuous Drain Current, V = 10V (Note 6) I A GS D 12 T = +70C A T = +25C 65 C A Continuous Drain Current, V = 10V (Note 7) I GS D 50 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 100 A DM Maximum Continuous Body Diode Forward Current (Note 6) I 3 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 100 A SM Avalanche Current, L = 0.1mH (Note 8) I 25 A AS Avalanche Energy, L = 0.1mH (Note 8) 31 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 1.3 W A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 99 C/W R JA Total Power Dissipation (Note 6) 2.6 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 6) Steady State 50 C/W R JA Total Power Dissipation (Note 7) 42 W T = +25C P C D Thermal Resistance, Junction to Case (Note 7) 3 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics (T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 24V, V = 0V DSS DS GS V = 20V, V = 0V GS DS Gate-Source Leakage 100 nA I GSS V = -16V, V = 0V GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage 1.0 3.0 V V V = V , I = 250A GS(TH) DS GS D 4.8 6 V = 10V, I = 20A GS D Static Drain-Source On-Resistance R m DS(ON) 6.8 9.8 V = 4.5V, I = 20A GS D Diode Forward Voltage V 0.7 1.0 V V = 0V, I = 2A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 1,155 ISS V = 15V, V = 0V, DS GS Output Capacitance C 456 pF OSS f = 1.0MHz Reverse Transfer Capacitance C 72 RSS Gate Resistance R 1.6 V = 0V, V = 0V, f = 1.0MHz g DS GS 16.7 Total Gate Charge (VGS = 10V) QG 8.4 Total Gate Charge (V = 4.5V) Q GS G nC V = 15V, I = 9A DD D Gate-Source Charge 2.2 Q GS Gate-Drain Charge 3.5 Q GD Turn-On Delay Time 3.5 t D(ON) Turn-On Rise Time 5.5 t V = 15V, V = 10V, R DD GS ns Turn-Off Delay Time t 13.5 R = 3, I = 9A D(OFF) g D 4.6 Turn-Off Fall Time t F Reverse Recovery Time t 19.3 ns RR I = 1.5A, di/dt = 100A/s F Reverse Recovery Charge Q 8.6 nC RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMT36M1LPS June 2017 Diodes Incorporated www.diodes.com Document number: DS39658 Rev. 3 - 2 NEW PRODUCT AADDVVAANNCCEED I INNFFOORRMMAATTIIOONN