IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) - 200 DS Repetitive Avalanche Rated R ( )V = - 10 V 1.5 DS(on) GS Surface Mount (IRFR9220, SiHFR9220) Q (Max.) (nC) 20 g Straight Lead (IRFUFU9220, SiHFU9220) Q (nC) 3.3 gs Available in Tape and Reel Q (nC) 11 gd P-Channel Configuration Single Fast Switching S Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 DPAK IPAK (TO-252) (TO-251) DESCRIPTION G D Third power MOSFETs technology is the key to Vishay D advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs S G S design achieve very low on-state resistance combined with D G high transconductance and extreme device ruggedness. D The DPAK is designed for surface mounting using vapor P-Channel MOSFET phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and a a a SiHFR9220-GE3 SiHFR9220TRL-GE3 SiHFR9220TRR-GE3 SiHFR9220TR-GE3 SiHFU9220-GE3 Halogen-free a a a IRFR9220PbF IRFR9220TRLPbF IRFR9220TRRPbF IRFR9220TRPbF IRFU9220PbF Lead (Pb)-free a a a SiHFR9220-E3 SiHFR9220TL-E3 SiHFR9220TR-E3 SiHFR9220T-E3 SiHFU9220-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 200 DS V Gate-Source Voltage V 20 GS T = 25 C - 3.6 C Continuous Drain Current V at - 10 V I GS D T = 100 C - 2.3 A C a Pulsed Drain Current I - 14 DM Linear Derating Factor 0.33 W/C e Linear Derating Factor (PCB Mount) 0.020 b Single Pulse Avalanche Energy E 310 mJ AS a Repetitive Avalanche Current I - 3.6 A AR a Repetitive Avalanche Energy E 4.2 mJ AR Maximum Power Dissipation T = 25 C 42 C P W D e T = 25 C 2.5 Maximum Power Dissipation (PCB Mount) A c Peak Diode Recovery dV/dt dV/dt - 5.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 50 V, Starting T = 25 C, L = 35 mH, R = 25 , I = - 3.6 A (see fig. 12). DD J g AS c. I - 3.9 A, dI/dt 95 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S13-0166-Rev. E, 04-Feb-13 Document Number: 91283 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R - - 110 thJA Maximum Junction-to-Ambient R -- 50 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 200 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = - 1 mA - - 0.22 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = - 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = - 200 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = - 160 V, V = 0 V, T = 125 C - - - 500 DS GS J b Drain-Source On-State Resistance R V = - 10 V I = - 2.2 A -- 1.5 DS(on) GS D Forward Transconductance g V = - 50 V, I = - 2.2 A 1.1 - - S fs DS D Dynamic Input Capacitance C - 340 - iss V = 0 V, GS Output Capacitance C -V = - 25 V, 110- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -33- rss Total Gate Charge Q -- 20 g I = - 3.9 A, V = - 160 V, D DS Gate-Source Charge Q --V = - 10 V 3.3 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --11 gd Turn-On Delay Time t -8.8 - d(on) Rise Time t -27 - r V = - 100 V, I = - 3.9 A, DD D ns b R = 18 , R = 24 , see fig. 10 g D Turn-Off Delay Time t -7.3- d(off) Fall Time t -19- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- - 3.6 S showing the A integral reverse G a I -- - 14 Pulsed Diode Forward Current SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = - 3.6 A, V = 0 V -- - 6.3 V SD J S GS Body Diode Reverse Recovery Time t - 150 300 ns rr b T = 25 C, I = - 3.9 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.97 2.0 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S13-0166-Rev. E, 04-Feb-13 Document Number: 91283 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000