IRFZ48S, SiHFZ48S, SiHFZ48L www.vishay.com Vishay Siliconix Power MOSFET FEATURES Advanced process technology D Surface-mount (IRFZ48S, SiHFZ48S) 2 2 I PAK (TO-262) D PAK (TO-263) Low-profile through-hole (SiHFZ48L) Available 175 C operating temperature Fast switching Available G Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Note * This datasheet provides information about parts that are D G S RoHS-compliant and / or parts that are non RoHS-compliant. For D S S example, parts with lead (Pb) terminations are not RoHS-compliant. G Please see the information / tables in this datasheet for details N-Channel MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with PRODUCT SUMMARY the fast switching speed and ruggedized device design that V (V) 60 power MOSFETs are well known for, provides the designer DS with an extremely efficient and reliable device for use in a R ( )V = 10 V 0.018 DS(on) GS wide variety of applications. Q max. (nC) 110 g 2 The D PAK (TO-263) is a surface-mount power package Q (nC) 29 capable of accommodating die sizes up to HEX-4. It gs provides the highest power capability and the lowest Q (nC) 36 gd possible on-resistance in any existing surface-mount 2 Configuration Single package. The D PAK (TO-263)is suitable for high curren t applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface-mount application. The through-hole version (SiHFZ48L) is available for low-profile applications. ORDERING INFORMATION 2 2 Package D PAK (TO-263) I PAK (TO-262) Lead (Pb)-free and halogen-free SiHFZ48S-GE3 SiHFZ48L-GE3 IRFZ48SPbF - Lead (Pb)-free IRFZ48STRLPbF - Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 60 DS V Gate-source voltage V 20 GS T = 25 C 50 C f Continuous drain current V at 10 V I GS D T = 100 C 50 A C a, e Pulsed drain current I 290 DM Linear derating factor 1.3 W/C b, e Single pulse avalanche energy E 100 mJ AS T = 25 C 190 C Maximum power dissipation P W D T = 25 C 3.7 A c, e Peak diode recovery dv/dt dv/dt 4.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes b. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) c. V = 25 V, Starting T = 25 C, L = 22 H, R = 25 , I = 72 A (see fig. 12) DD J g AS d. I 72 A, di/dt 200 A/s, V V , T 175 C SD DD DS J e. 1.6 mm from case f. Uses IRFZ48, SiHFZ48 data and test conditions g. Calculated continuous current based on maximum allowable junction temperature S20-0684-Rev. E, 07-Sep-2020 Document Number: 90377 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFZ48S, SiHFZ48S, SiHFZ48L www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -40 thJA a (PCB mount) C / W Maximum junction-to-case (drain) R -0.8 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 60 - - V DS GS D c V temperature coefficient V /T Reference to 25 C, I = 1 mA -0.060 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 43 A - - 0.018 DS(on) GS D b Forward transconductance g V = 25 V, I = 43 A 27 - - S fs DS D Dynamic Input capacitance C - 2400 - iss V = 0 V, GS Output capacitance C -V = 25 V, 1300- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -190- rss Total gate charge Q -- 110 g I = 72 A, V = 48 V, D DS Gate-source charge Q --V = 10 V 29 nC gs GS b, c see fig. 6 and 13 Gate-drain charge Q --36 gd Turn-on delay time t -8.1 - d(on) Rise time t - 250 - r V = 30 V, I = 72 A, DD D ns b, c R = 9.1 , R = 0.34 , see fig. 10 Turn-off delay time t -g D 210- d(off) Fall time t -250- f Internal source inductance L Between lead, and center of die contact - 7.5 - nH S Drain-Source Body Diode Characteristics MOSFET symbol D c Continuous source-drain diode current I -- 50 S showing the A integral reverse G a Pulsed diode forward current I p - n junction diode -- 290 SM S b Body diode voltage V T = 25 C, I = 72 A, V = 0 V -- 2.0 V SD J S GS Body diode reverse recovery time t - 120 180 ns rr b, c T = 25 C, I = 72 A, di/dt = 100 A/s J F Body diode reverse recovery charge Q -0.5 0.8 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 %. c. Uses IRFZ48, SiHFZ48 data and test conditions d. Calculated continuous current based on maximum allowable junction temperature S20-0684-Rev. E, 07-Sep-2020 Document Number: 90377 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000