NTBS2D7N06M7 NChannel PowerTrench MOSFET 60 V, 110 A, 2.7 m Features www.onsemi.com Typical R = 2.2 m at V = 10 V, I = 80 A DS(on) GS D Typical Q = 80 nC at V = 10 V, I = 80 A g(tot) GS D D UIS Capability These Devices are PbFree and are RoHS Compliant Applications Industrial Motor Drive G Industrial Power Supply Industrial Automation S Battery Operated Tools Battery Protection Solar Inverters UPS and Energy Inverters Energy Storage Load Switch 2 D PAK3 TO263 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) J CASE 418AJ Rating Symbol Value Unit DraintoSource Voltage V 60 V DSS MARKING DIAGRAM GatetoSource Voltage V 20 V GS I A Drain Current Continuous (T = 25C) 110 C D NTB (V = 10) (Note 1) GS S2D7N06M7 Pulsed Drain Current (T = 25C) See C AYWWG Figure 4 Single Pulse Avalanche Energy (Note 2) E 193 mJ AS Power Dissipation P 176 W D Derate Above 25C 1.2 W/C NTBS2D7N06M7= Specific Device Code Operating and Storage Temperature T , T 55 to C A = Assembly Location J STG Range +175 Y = Year WW = Work Week Thermal Resistance, Junction to Case 0.85 R C/W JC G = Pb-Free Package Maximum Thermal Resistance, Junction R 43 C/W JA to Ambient (Note 3) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information on page 2 of assumed, damage may occur and reliability may be affected. this data sheet. 1. Current is limited by bondwire configuration. 2. Starting T = 25C, L = 50 H, I = 88 A, V = 60 V during inductor J AS DD charging and V = 0 V during time in avalanche. DD 3. R is the sum of the junctiontocase and casetoambient thermal JA resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by design, while JC R is determined by the board design. The maximum rating presented here JA 2 is based on mounting on a 1 in pad of 2oz copper. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: December, 2017 Rev. 0 NTBS2D7N06M7/DNTBS2D7N06M7 PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Reel Size Tape Width Quantity 2 NTBS2D7N06M7 NTBS2D7N D PAK (TO263) 330 mm 24 mm 800 Units For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV DraintoSource Breakdown Voltage V =0V, I = 250 A 60 V DSS GS D I DraintoSource Leakage Current V =60V, V =0V, T =25 C 1 A DSS DS GS J 1 mA V =60V, V =0V, T = 175 C DS GS J (Note 4) I GatetoSource Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V GatetoSource Threshold Voltage V =V , I = 250 A 2.0 3.2 4.0 V GS(th) GS DS D R DraintoSource On Resistance V =10V, I = 80 A, T =25 C 2.2 2.7 m DS(on) GS D J V =10V, I = 80 A, T = 175 C 4.1 5.0 m GS D J (Note 4) DYNAMIC CHARACTERISTICS C Input Capacitance V =30V, V = 0 V, f = 1 MHz 6655 pF iss DS GS C Output Capacitance 1745 pF oss C Reverse Transfer Capacitance 57 pF rss R Gate Resistance f = 1 MHz 2.2 g Q Total Gate Charge at 10 V V =30V, I = 80 A, V = 0 to 10 V 80 110 nC g(tot) DD D GS Q Threshold Gate Charge V =30V, I = 80 A, V = 0 to 2 V 12 nC g(th) DD D GS Q GatetoSource Gate Charge V =30V, I =80A 35 nC gs DD D Q GatetoDrain Miller Charge V =30V, I =80A 10 nC gd DD D SWITCHING CHARACTERISTICS t Turn-On Time V =30V, I =80A, 115 ns (on) DD D V =10V, R =6 GS GEN t Turn-On Delay 36 ns d(on) t Rise Time 52 ns r t Turn-Off Delay 36 ns d(off) t Fall Time 13 ns f t Turn-Off Time 64 ns off DRAINSOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode Voltage V =0V, I =80A 1.25 V SD GS SD V =0V, I =40A 1.2 V GS SD t ReverseRecovery Time V =48V, I =80A, 78 102 ns rr DD F dI /dt = 100 A/ s SD Q ReverseRecovery Charge 100 130 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J www.onsemi.com 2