FDBL9403L-F085 Single NChannel Power MOSFET 40 V, 240 A, 0.72 m Features www.onsemi.com Small Footprint (TOLL) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D AECQ101 Qualified and PPAP Capable 0.72 m 10 V 40 V 80 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS 0.98 m 4.5 V Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J D (9) Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS G (1) Continuous Drain Steady T = 25C I 240 A C D Current R State JC (Notes 1, 3) S (2 8) N-CHANNEL MOSFET Power Dissipation Steady T = 25C P 357.1 W C D R (Note 1) State JC T = 100C 178.6 C Continuous Drain Steady T = 25C I 53.3 A C D Current R State JA T = 100C 37.7 (Notes 1, 2, 3) C Power Dissipation Steady T = 25C P 3.5 W C D R (Notes 1, 2) State JA T = 100C 1.7 C Pulsed Drain Current T = 25C, t = 10 s I 2113 A HPSOF8L C p DM CASE 100CU Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 Source Current (Body Diode) I 100 A S MARKING DIAGRAM Single Pulse DraintoSource Avalanche E 624 mJ AS Energy (I = 79 A, L = 0.2 mH) L(pk) Lead Temperature for Soldering Purposes T 260 C L &Z&3&K (1/8 from case for 10 s) FDBL Stresses exceeding those listed in the Maximum Ratings table may damage the 9403L device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Current is limited by bondwire configuration. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. &Z = Assembly Plant Code 3. Maximum current for pulses as long as 1 second is higher but is dependent &3 = Numeric Date Code on pulse duration and duty cycle. &K = Lot Code FDBL9403L = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: May, 2018 Rev. 0 FDBL9403LF085/DFDBL9403L F085 Table 1. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R JunctiontoCase Steady State 0.42 C/W JC R JunctiontoAmbient Steady State (Note 4) 43 JA 2 4. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. Table 2. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS V Drain-to-Source Breakdown Voltage I = 250 A, V = 0 V 40 V (BR)DSS D GS V /T Drain-to-Source Breakdown Voltage 22.5 mV/C (BR)DSS J Temperature Coefficienct I Zero Gate Voltage Drain Current V = 40 V, V = 0 V, T = 25C 1 A DSS DS GS J V = 40 V, V = 0 V, T = 175C 1 mA DS GS J I Zero Gate Voltage Drain Current V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) V Gate Threshold Voltage V = V , I = 250 A 1 1.75 3 V GS(th) GS DS D V /T Threshold Temperature Coefficient 5.6 mV/C GS(th) J R DraintoSource On Resistance V = 10 V, I = 80 A 0.59 0.72 m DS(on) GS D V = 4.5 V, I = 40 A 0.76 0.98 GS D CHARGES, CAPACITANCES & GATE RESISTANCE C Input Capacitance V = 0 V, f = 1 MHz, V = 20 V 14100 pF GS DS iss C Output Capacitance 4070 oss C Reverse Transfer Capacitance 300 rss R Gate Resistance V = 0.5 V, f = 1 MHz 3.3 g GS Q Total Gate Charge V = 4.5 V, V = 32 V, I = 80 A 97 nC g(tot) GS DS D V = 10 V, V = 32 V, I = 80 A 203 GS DS D Q Threshold Gate Charge V = 0 V to 1 V 13 g(th) GS Q GatetoSource Gate Charge V = 32 V, I = 80 A 40 gs DD D Q GatetoDrain Miller Charge 27 gd V Plateau Voltage 3 V GP SWITCHING CHARACTERISTICS t Turn-On Delay Time V = 20 V, I = 80 A, 21 ns DD D d(on) V = 10 V, R = 6 GS GEN t Turn-On Rise Time 42 r t Turn-Off Delay Time 288 d(off) t Turn-Off Fall Time 101 f DRAIN-SOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode Voltage V I = 80 A, V = 0 V 0.79 1.25 SD SD GS I = 40 A, V = 0 V 0.75 1.2 SD GS t Reverse Recovery Time V = 0 V, dI /dt = 100 A/ s, I = 80 A 96 ns rr GS SD S t Charge Time 46 a t Discharge Time 50 b Q Reverse Recovery Charge 130 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2