X-On Electronics has gained recognition as a prominent supplier of FDC3535 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDC3535 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDC3535 ON Semiconductor

FDC3535 electronic component of ON Semiconductor
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See Product Specifications
Part No.FDC3535
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET MOSFET; -80V P-Chan PowerTrench
Datasheet: FDC3535 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
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MOQ : 3000
Multiples : 3000
3000 : USD 0.3444
6000 : USD 0.3078
15000 : USD 0.2964
30000 : USD 0.2849
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Obsolete
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MOQ : 1
Multiples : 1
1 : USD 0.8966
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Obsolete
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MOQ : 1
Multiples : 1
1 : USD 0.8966
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MOQ : 1
Multiples : 1
1 : USD 1.2843
10 : USD 1.0975
100 : USD 0.8354
500 : USD 0.6642
1000 : USD 0.5119
3000 : USD 0.4615
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Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.2859
6000 : USD 0.2744
9000 : USD 0.2744
12000 : USD 0.2744
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MOQ : 1
Multiples : 1
1 : USD 9.4188
10 : USD 9.172
30 : USD 9.0069
100 : USD 8.8418
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MOQ : 1
Multiples : 1
1 : USD 1.9677
10 : USD 0.8985
100 : USD 0.5334
250 : USD 0.5178
500 : USD 0.4215
1000 : USD 0.3376
3000 : USD 0.318
6000 : USD 0.2775
9000 : USD 0.2672
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MOQ : 53
Multiples : 1
53 : USD 0.5149
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MOQ : 53
Multiples : 1
53 : USD 0.5149
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MOQ : 44
Multiples : 1
44 : USD 0.589
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MOQ : 44
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44 : USD 0.589
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MOQ : 45
Multiples : 1
45 : USD 0.6079
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MOQ : 45
Multiples : 1
45 : USD 0.6079
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Height
Length
Product
Transistor Type
Width
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDC3535 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDC3535 and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDC3535 P-Channel Power Trench MOSFET FDC3535 P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 m Features General Description Max r = 183 m at V = -10 V, I = -2.1 A This P-Channel MOSFET is produced using ON DS(on) GS D Semiconductors advanced Power Trench process that has Max r = 233 m at V = -4.5 V, I = -1.9 A DS(on) GS D been optimized for r , switching performance and DS(on) High performance trench technology for extremely low r ruggedness. DS(on) High power and current handling capability in a widely used surface mount package Applications Fast switching speed Load Switch 100% UIL Tested Synchronous Rectifier RoHS Compliant S D S G 4 3 D D D 5 2 G D Pin 1 D 6 1 D D TM SuperSOT -6 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units Drain to Sour V ce Voltage -80 V DS Gate V to Source Voltage 20 V GS Drain Current -Continuous (Note 1a) -2.1 A I D -Pulsed -10 E Single Pulse Avalanche Energy (Note 3) 37 mJ AS P ower Dissipation (Note 1a) 1.6 P W D Power Dissipation (Note 1b) 0.7 , T Operating and Storage Junction Temperature Range -55 to +150 C T J STG Thermal Characteristics R Thermal Resistance, Junction to Case 30 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 78 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .535 FDC3535 SSOT-6 7 8 mm 3000 units 1 Publication Order Number: 2010 Semiconductor Components Industries, LLC. October-2017, Rev. 2 FDC3535/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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