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X-On Electronics has gained recognition as a prominent supplier of FDC5612 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDC5612 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDC5612 ON Semiconductor

FDC5612 electronic component of ON Semiconductor
FDC5612 ON Semiconductor
FDC5612 MOSFETs
FDC5612  Semiconductors

Images are for reference only
See Product Specifications
Part No. FDC5612
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 60V; 4.3A; 1.6W; SuperSOT-6
Datasheet: FDC5612 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.55 ea
Line Total: USD 2.75 
Availability - 489
Ship by Thu. 13 Mar to Tue. 18 Mar
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
23280
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.2171
6000 : USD 0.2134
9000 : USD 0.2123
12000 : USD 0.2098
27000 : USD 0.2085
51000 : USD 0.2075

2910
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.225
6000 : USD 0.2225
9000 : USD 0.22
12000 : USD 0.2187
15000 : USD 0.2162

489
Ship by Thu. 13 Mar to Tue. 18 Mar
MOQ : 5
Multiples : 5
5 : USD 0.55
50 : USD 0.3787
150 : USD 0.3049
500 : USD 0.2352
3000 : USD 0.2152
6000 : USD 0.2033

2861
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 158
Multiples : 1
158 : USD 0.412
190 : USD 0.3427
250 : USD 0.3419
500 : USD 0.2881
1000 : USD 0.2617

17460
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.237
6000 : USD 0.2345
9000 : USD 0.2208

23280
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.2822
6000 : USD 0.2774
9000 : USD 0.2759
12000 : USD 0.2726
27000 : USD 0.271

   
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
 
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We are delighted to provide the FDC5612 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDC5612 and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDC5612 FDC5612 60V N-Channel PowerTrench MOSFET Features General Description 4.3 A, 60 V. R = 0.055 V = 10 V DS(ON) GS This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC R = 0.064 V = 6 V DS(ON) GS converters using either synchronous or conventional Low gate charge (12.5nC typical). switching PWM controllers. These MOSFETs feature faster switching and lower gate Fast switching speed. charge than other MOSFETs with comparable R DS(ON) specifications. High performance trench technology for extremely low R . The result is a MOSFET that is easy and safer to drive DS(ON) (even at very high frequencies), and DC/DC power supply TM SuperSOT -6 package: small footprint (72% smaller designs with higher overall efficiency. than standard SO-8) low profile (1mm thick). S 1 6 D D 2 5 G D 3 4 D TM SuperSOT -6 T = 25C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage 60 V DSS V Gate-Source Voltage 20 V GSS (Note 1a) ID Drain Current - Continuous 4.3 A Drain Current - Pulsed 20 P Power Dissipation for Single Operation (Note 1a) 1.6 W D (Note 1b) 0.8 C T , T Operating and Storage Junction Temperature Range -55 to +150 J stg Thermal Characteristics R (Note 1a) C/W JA Thermal Resistance, Junction-to-Ambient 78 R Thermal Resistance, Junction-to-Case (Note 1) 30 C/W JC Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity .562 FDC5612 7 8mm 3000 units 2004 Semiconductor Components Industries, LLC. Publication Order Number: FDC5612/D October-2017, Rev. 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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