X-On Electronics has gained recognition as a prominent supplier of FDC5661N_F085 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDC5661N_F085 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDC5661N_F085 ON Semiconductor

FDC5661N_F085 electronic component of ON Semiconductor
FDC5661N_F085 ON Semiconductor
FDC5661N_F085 MOSFETs
FDC5661N_F085  Semiconductors

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See Product Specifications
Part No. FDC5661N_F085
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Trans MOSFET N-CH 60V 4.3A 6-Pin SuperSOT T/R
Datasheet: FDC5661N_F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
141: USD 0.4843 ea
Line Total: USD 68.29 
Availability - 5432
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ: 141  Multiples: 1
Pack Size: 1
Availability Price Quantity
5432
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ : 106
Multiples : 1
106 : USD 0.6456
134 : USD 0.5103
141 : USD 0.4843
174 : USD 0.3926
250 : USD 0.3866
500 : USD 0.3243
1000 : USD 0.2992
3000 : USD 0.2541

6
Ship by Wed. 19 Mar to Mon. 24 Mar
MOQ : 1
Multiples : 1
1 : USD 0.9996
10 : USD 0.8236
30 : USD 0.6295
100 : USD 0.4997
500 : USD 0.4584
1000 : USD 0.4368

5432
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ : 141
Multiples : 1
141 : USD 0.4843
174 : USD 0.3926
250 : USD 0.3866
500 : USD 0.3243
1000 : USD 0.2992
3000 : USD 0.2541

29714
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ : 1762
Multiples : 1
1762 : USD 0.2794

36952
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ : 1762
Multiples : 1
1762 : USD 0.2794

5820
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.303
6000 : USD 0.2979
9000 : USD 0.2963
12000 : USD 0.2922
27000 : USD 0.2897

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
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Cnhts
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Typical Turn-On Delay Time
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We are delighted to provide the FDC5661N_F085 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDC5661N_F085 and other electronic components in the MOSFETs category and beyond.

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MOSFET N-Channel, Logic Level, POWERTRENCH 60 V, 4 A, 60 m FDC5661N-F085 Features www.onsemi.com R = 47 m at V = 10 V, I = 4.3 A DS(on) GS D R = 60 m at V = 4.5 V, I = 4 A DS(on) GS D S D Typ Q = 14.5 nC at V = 10 V g(TOT) GS D Low Miller Charge G UIS Capability D D AECQ101 Qualified and PPAP Capable Pin 1 This Device is PbFree, Halogen Free/BFR Free and is RoHS TSOT236 Compliant CASE 419BL Applications MARKING DIAGRAM DC/DC Converter Motor Drives XXX M MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) A 1 Rating Symbol Value Unit XXX = Specific Device Code Drain to Source Voltage V 60 V DSS M = Date Code Gate to Source Voltage V 20 V GS = PbFree Package Drain Current Continuous (V = 10 V) I 4.3 A GS D (Note: Microdot may be in either location) Pulsed 20 PIN CONNECTIONS Single Pulse Avalanche Energy (Note 1) E 81 mJ AS Power Dissipation P 1.6 W D 1 6 Operating and Storage Temperature T , T 55 to C J STG +150 2 5 Thermal Resistance Junction to Case R 30 C/W JC Thermal Resistance Junction to Ambient R 78 C/W 3 4 JA 2 TO263, 1in Copper Pad Area Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information on page 6 of 1. E of 81 mJ is 100% test at L = 14 mH, I = 3.4 A, Starting T = 25C AS AS J this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2021 Rev. 3 FDC5661NF085/DFDC5661N F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage B I = 250 A, V = 0 V 60 V VDSS D GS Zero Gate Voltage Drain Current I V = 48 V, V = 0 V 1 A DSS DS GS T = 150C 250 A Gate to Source Leakage Current I V = 20 V 100 nA GSS GS ON CHARACTERISTICS Gate to Source Threshold Voltage V V = V , I = 250 A 1 2.0 3 V GS(th) GS DS D Drain to Source OnResistance R V = 10 V, I = 4.3 A 38 47 m DS(on) GS D V = 4.5 V, I = 4 A 46 60 GS D V = 10 V, I = 4.3 A T = 150C 69 86 GS D J DYNAMIC CHARACTERISTICS Input Capacitance C V = 0 V, V = 25 V, 763 pF iss GS DS f = 1 MHz Output Capacitance C 68 pF oss Reverse Transfer Capacitance C 36 pF rss Gate Resistance R f = 1 MHz 2.6 G Total Gate Charge at 10 V Q V = 0 to 10 V, V = 30 V, I = 4.3 A 14.5 19 nC g(TOT) GS DD D V = 30 V, I = 4.3 A Gate to Source Gate Charge Q 2.4 nC gs DD D Gate to Drain Miller Charge Q 2.9 nC gd SWITCHING CHARACTERISTICS V = 10 V, V = 30 V, TurnOn Time t 17.6 ns on GS DD I = 4.3 A, R = 6 , D GS TurnOn Delay Time t 7.2 ns d(on) Rise Time t 1.6 ns r TurnOff Delay Time t 19.3 ns d(off) Fall Time t 3.1 ns f TurnOff Time t 36 ns off DRAINSOURCE DIODE CHARACTERISTICS Source to Drain Diode Voltage V I = 4.3 A 0.8 1.25 V SD SD I = 2.1 A 0.8 1.0 SD Reverse Recovery Time t I = 4.3 A, dI /dt = 100 A/ s 18.4 24 ns rr SD SD Reverse Recovery Charge Q 10.0 13 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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