DATA SHEET www.onsemi.com MOSFET Dual, N-Channel, V R MAX I MAX DSS DS(ON) D POWERTRENCH 100 V 500 m 10 V 1.0 A 550 m 6.0 V 100 V Specified FDC3601N D2 S1 General Description D1 These NChannel 100 V specified MOSFETs are produced using onsemis advanced POWERTRENCH process that has been G2 S2 especially tailored to minimize onstate resistance and yet maintain G1 low gate charge for superior switching performance. TSOT23 6Lead SUPERSOT6 These devices have been designed to offer exceptional power CASE 419BL dissipation in a very small footprint for applications where the bigger more expensive SO8 and TSSOP8 packages are impractical. Features MARKING DIAGRAM 1.0 A, 100 V R = 500 V = 10 V DS(ON) GS XXX M R = 550 V = 6.0 V DS(ON) GS Low Gate Charge (3.7 nC Typical) 1 Fast Switching Speed XXX = Specific Device Code High Performance Trench Technology for Extremely Low R M = Date Code DS(ON) = PbFree Package SUPERSOT 6 Package: Small Footprint 72% (Smaller than (Note: Microdot may be in either location) Standard SO8) Low Profile (1 mm Thick) This is a PbFree Device PINOUT Applications Load Switch Battery Protection 4 3 Power Management 5 2 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Ratings Unit V DrainSource Voltage 100 V DSS 6 1 V GateSource Voltage 20 V GSS I Drain Current Continuous (Note 1a) 1.0 A D Pulsed 4.0 A P Power (Note 1a) 0.96 W D Dissipation for ORDERING INFORMATION (Note 1b) 0.9 W Single Operation See detailed ordering and shipping information on page 5 of (Note 1c) 0.7 W this data sheet. T , T Operating and Storage Temperature Range 55 to +150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R JA Thermal Resistance, JunctiontoAmbient 130 C/W (Note 1a) R JC Thermal Resistance, JunctiontoCase 60 C/W (Note 1) Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: December, 2021 Rev. 4 FDC3601N/DFDC3601N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV DrainSource Breakdown Voltage V = 0 V, I = 250 A 100 V DSS GS D Breakdown Voltage Temperature I = 250 A,Referenced to 25C 105 mV/C BV D DSS Coefficient T J I Zero Gate Voltage Drain Current V = 80 V, V = 0 V 10 A DSS DS GS I GateBody Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I GateBody Leakage, Reverse V = 20 V, V = 0 V 100 nA GSSR GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage V = V , I = 250 A 2 2.6 4 V GS(th) DS GS D Gate Threshold Voltage Temperature I = 250 A, Referenced to 25C 5 mV/C V D GS(th) Coefficient T J R Static DrainSource OnResistance V = 10 V, I = 1.0 A 370 500 m DS(on) GS D V = 6 V, I = 0.9 A 396 550 GS D V = 10 V, I = 1.0 A, T = 125C 685 976 GS D J I OnState Drain Current V = 10 V, V = 10 V 3 A D(on) GS DS g Forward Transconductance V = 5 V, I = 1.0 A 3.6 S FS DS D DYNAMIC CHARACTERISTICS V = 50 V, V = 0 V, f = 1.0 MHz C Input Capacitance 153 pF iss DS GS C Output Capacitance 5 pF oss C Reverse Transfer Capacitance 1 pF rss SWITCHING CHARACTERISTICS (Note 2) t TurnOn Delay Time V = 50 V, I = 1 A, V = 10 V, 8 16 ns d(on) DD D GS R = 6 GEN t TurnOn Rise Time 4 8 ns r t TurnOff Delay Time 11 20 ns d(off) t TurnOff Fall Time 6 12 ns f Q Total Gate Charge V = 50 V, I = 1.0 A, V = 10 V 3.7 5 nC g DS D GS Q GateSource Charge 0.8 nC gs Q GateDrain Charge 1 nC gd DRAINSOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous DrainSource Diode Forward Current 0.8 A S V DrainSource Diode Forward Voltage V = 0 V, I = 0.8 A (Note 2) 0.8 1.2 V SD GS S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. R is the sum of the junctiontocase and casetoambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board design. JC CA a. 130C/W when mounted b. 140C/W when mounted c. 180C/W when mounted 2 2 on a 0.125 in pad of 2 oz. on a .005 in pad of 2 oz. on a minimum pad. copper. copper. Scale 1:1 on letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0 %. www.onsemi.com 2