MOSFET - Power, Single N-Channel 40 V, 1.1 m , 240 A FDBL9406L-F085 Features Small Footprint (TOLL) for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G AECQ101 Qualified and PPAP Capable V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1.1 m 10 V 40 V 80 A Compliant 1.78 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J D (9) Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS G (1) Continuous Drain T = 25C I 240 A C D Current R JC (Notes 1, 3) Steady S (28) State Power Dissipation T = 25C P 300 W C D NCHANNEL MOSFET R (Note 1) JC T = 100C 150 C Continuous Drain T = 25C I 43 A A D Current R JA T = 100C 31 (Notes 1, 2, 3) A Steady State Power Dissipation T = 25C P 3.5 W A D R (Notes 1, 2) JA T = 100C 1.7 A Pulsed Drain Current T = 25C, t = 10 s I 2755 A MO299A C p DM CASE 100CU Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 Source Current (Body Diode) I 100 A MARKING DIAGRAM S Single Pulse DraintoSource Avalanche E 217 mJ AS Energy (I = 85 A L = 60 H) L(pk) Lead Temperature for Soldering Purposes T 260 C L &Z&3&K (1/8 from case for 10 s) FDBL 9406L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit &Z = Assembly Plant Code &3 = Numeric Date Code JunctiontoCase Steady State R 0.5 C/W JC &K = Lot Code FDBL9406L = Specific Device Code JunctiontoAmbient Steady State (Note 2) R 43 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Current is limited by bondwire configuration. ORDERING INFORMATION 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. See detailed ordering and shipping information on page 7 of 3. Maximum current for pulses as long as 1 second is higher but is dependent this data sheet. on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: December, 2019 Rev. 1 FDBL9406LF085/DFDBL9406L F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V =0V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 19.3 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V =0V, V =40V, T =25C 1 A DSS GS DS J V =0V, V =40V, T = 175C 1 mA GS DS J Zero Gate Voltage Drain Current I V =0V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V =V , I = 250 A 1 1.9 3 V GS(th) GS DS D Threshold Temperature Coefficient V /T 6.5 mV/C GS(th) J DraintoSource On Resistance R V =10V, I =80A 0.9 1.1 m DS(on) GS D V = 4.5 V, I =40A 1.25 1.78 GS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, V = 20 V 8600 pF iss GS DS Output Capacitance C 2380 pF oss Reverse Transfer Capacitance C 106 pF rss Gate Resistance R V = 0.5 V, f = 1 MHz 2 g GS Total Gate Charge Q V = 4.5 V, V = 32 V, I = 80 A 58 nC G(TOT) GS DS D V =10V, V = 32 V, I = 80 A 121 GS DS D Threshold Gate Charge Q V = 0 to 1 V 7 g(th) GS GatetoSource Gate Charge Q V =32V, I =80A 26 gs DD D GatetoDrain Miller Charge Q 19 gd Plateau Voltage V 3.2 V GP SWITCHING CHARACTERISTICS Turn-On Delay Time t V =20V, I =80A, 22 ns d(on) DD D V =10V, R =6 GS GEN Turn-On Rise Time t 22 ns r Turn-Off Delay Time t 134 ns d(off) Turn-Off Fall Time t 44 ns f DRAINSOURCE DIODE CHARACTERISTICS SourcetoDrain Diode Voltage V I = 80 A, V = 0 V 0.81 1.25 V SD SD GS I = 40 A, V = 0 V 0.77 1.2 V SD GS Reverse Recovery Time T V = 0 V, dI /dt = 100 A/ s 77 ns RR GS SD I = 80 A S Charge Time t 38 a Discharge Time t 39 b Reverse Recovery Charge Q 95 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2