X4-Class V = 150V IXTK400N15X4 DSS TM Power MOSFET I = 400A IXTX400N15X4 D25 R 3.1m DS(on) N-Channel Enhancement Mode D Avalanche Rated G TO-264P (IXTK) S Symbol Test Conditions Maximum Ratings G V T = 25 C to 175 C 150 V DSS J D D (Tab) V T = 25 C to 175 C, R = 1M 150 V DGR J GS S V Continuous 20 V GSS PLUS247 V Transient 30 V GSM (IXTX) I T = 25 C (Chip Capability) 400 A D25 C I External Lead Current Limit 160 A L(RMS) I T = 25 C, Pulse Width Limited by T 900 A DM C JM G D D (Tab) S I T = 25 C 200 A A C E T = 25 C3J AS C P T = 25 C 1500 W D C G = Gate D = Drain dv/dt I I , V V , T 150C 50 V/ns S = Source Tab = Drain S DM DD DSS J T -55 ... +175 C J T 175 C JM T -55 ... +175 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages Low Q G M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d Avalanche Rated F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Low Package Inductance Weight TO-264 10 g PLUS247 6 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 150 V Applications DSS GS D V V = V , I = 1mA 2.5 4.5 V GS(th) DS GS D Switch-Mode and Resonant-Mode Power Supplies I V = 20V, V = 0V 200 nA GSS GS DS DC-DC Converters PFC Circuits I V = V , V = 0V 25 A DSS DS DSS GS AC and DC Motor Drives T = 150C 2 mA J Robotics and Servo Controls R V = 10V, I = 100A, Note 1 2.4 3.1 m DS(on) GS D 2019 IXYS CORPORATION, All Rights Reserved DS100905B(11/19)IXTK400N15X4 IXTX400N15X4 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 100 170 S fs DS D R Gate Input Resistance 1.2 Gi C 14.5 nF iss C V = 0V, V = 25V, f = 1MHz 3.1 nF oss GS DS C 8.0 pF rss Effective Output Capacitance C Energy related 2500 pF o(er) V = 0V GS C 9400 pF Time related V = 0.8 V o(tr) DS DSS t 40 ns d(on) Resistive Switching Times t 22 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 180 ns d(off) R = 1 (External) G t 8 ns f Q 430 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 100 nC gs GS DS DSS D D25 Q 100 nC gd R 0.10C/W thJC R 0.15C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 400 A S GS I Repetitive, Pulse Width Limited by T 1600 A SM JM V I = 100A , V = 0V, Note 1 1.4 V SD F GS t 175 ns rr I = 150A, -di/dt = 100A/ s F Q 1.1 C RM V = 100V, V = 0V R GS I 12.3 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537