X-On Electronics has gained recognition as a prominent supplier of NTD20N06LT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD20N06LT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD20N06LT4G ON Semiconductor

NTD20N06LT4G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTD20N06LT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: N-Channel 60 V 20A (Ta) 1.36W (Ta), 60W (Tj) Surface Mount DPAK
Datasheet: NTD20N06LT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
623: USD 0.7826 ea
Line Total: USD 487.56 
Availability - 0
MOQ: 623  Multiples: 623
Pack Size: 623
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.4207
5000 : USD 0.4111
12500 : USD 0.4019

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 2.4948
10 : USD 2.1518
100 : USD 1.6774
500 : USD 1.3856
1000 : USD 1.1602

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 1
2500 : USD 0.6957
7500 : USD 0.6316
20000 : USD 0.619
37500 : USD 0.6056

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.3367
5000 : USD 0.3233
7500 : USD 0.3233
10000 : USD 0.3233

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.7402
10 : USD 1.4994

0
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 4.4804
10 : USD 3.9729
30 : USD 3.6713
100 : USD 3.3661
500 : USD 3.2268
1000 : USD 3.1618

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.8738
10 : USD 1.0745
100 : USD 0.8047

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.3296
5 : USD 1.0874
20 : USD 0.8688
55 : USD 0.8162
500 : USD 0.7951

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.4207
5000 : USD 0.4111
12500 : USD 0.4019

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 623
Multiples : 623
623 : USD 0.7826
1000 : USD 0.7391

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the NTD20N06LT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD20N06LT4G and other electronic components in the MOSFETs category and beyond.

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NTD20N06L, NTDV20N06L MOSFET Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V www.onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge V R TYP I MAX (BR)DSS DS(on) D circuits. 20 A 60 V 39 m 5.0 V (Note 1) Features AEC Q101 Qualified NTDV20N06L D These Devices are PbFree and are RoHS Compliant Typical Applications NChannel Power Supplies G Converters S Power Motor Controls 4 Bridge Circuits MAXIMUM RATINGS (T = 25C unless otherwise noted) J 4 Rating Symbol Value Unit 1 DraintoSource Voltage V 60 Vdc 2 1 DSS 2 3 3 DraintoGate Voltage (R = 10 M ) V 60 Vdc GS DGR DPAK IPAK GatetoSource Voltage Vdc CASE 369C CASE 369D Continuous V 15 GS STYLE 2 STYLE 2 Nonrepetitive (t 10 ms) p V 20 GS Drain Current MARKING DIAGRAMS Continuous T = 25C I 20 Adc A D & PIN ASSIGNMENTS Continuous T = 100C A I 10 D Single Pulse (t 10 s) p 4 4 I 60 Apk DM Drain Drain Total Power Dissipation T = 25C P 60 W A D Derate above 25C 0.40 W/C Total Power Dissipation T = 25C (Note 1) A 1.88 W Total Power Dissipation T = 25C (Note 2) A 1.36 W Operating and Storage Temperature Range T , T 55 to C J stg +175 2 1 3 Drain Single Pulse DraintoSource Avalanche E 128 mJ AS Gate Source Energy Starting T = 25C 1 2 3 J (V = 25 Vdc, V = 5.0 Vdc, Gate Drain Source DD GS L = 1.0 mH, I (pk) = 16 A, V = 60 Vdc) L DS A = Assembly Location* Thermal Resistance C/W Y = Year JunctiontoCase R 2.5 WW = Work Week JC JunctiontoAmbient (Note 1) R 80 20N6L = Device Code JA JunctiontoAmbient (Note 2) R 110 G = PbFree Package JA Maximum Lead Temperature for Soldering T 260 C * The Assembly Location code (A) is front side L Purposes, 1/8 in from case for 10 seconds optional. In cases where the Assembly Location is stamped in the package, the front side assembly Stresses exceeding those listed in the Maximum Ratings table may damage the code may be blank. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. When surface mounted to an FR4 board using 1 in pad size, (Cu Area 1.127 in ). ORDERING INFORMATION 2. When surface mounted to an FR4 board using recommended pad size, See detailed ordering and shipping information on page 2 of 2 (Cu Area 0.412 in ). this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: May, 2019 Rev. 5 NTD20N06L/D AYWW 20 N6LG AYWW 20 N6LGNTD20N06L, NTDV20N06L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 60 71.3 GS D 71.2 mV/C Temperature Coefficient (Positive) Zero Gate Voltage Drain Current I Adc DSS (V = 60 Vdc, V = 0 Vdc) 1.0 DS GS (V = 60 Vdc, V = 0 Vdc, T = 150C) 10 DS GS J GateBody Leakage Current (V = 15 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V Vdc GS(th) (V = V , I = 250 Adc) 1.0 1.6 2.0 DS GS D Threshold Temperature Coefficient (Negative) 4.6 mV/C Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 5.0 Vdc, I = 10 Adc) 39 48 GS D Static DraintoSource OnResistance (Note 3) V Vdc DS(on) (V = 5.0 Vdc, I = 20 Adc) 0.81 1.66 GS D (V = 5.0 Vdc, I = 10 Adc, T = 150C) 0.72 GS D J Forward Transconductance (Note 3) (V = 4.0 Vdc, I = 10 Adc) g 17.5 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 707 990 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 224 320 oss f = 1.0 MHz) Transfer Capacitance C 72 105 rss SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 9.6 20 ns d(on) (V = 30 Vdc, I = 20 Adc, DD D Rise Time t 98 200 r V = 5.0 Vdc, GS TurnOff Delay Time t 25 50 d(off) R = 9.1 ) (Note 3) G Fall Time t 62 120 f Gate Charge Q 16.6 32 nC T (V = 48 Vdc, I = 20 Adc, DS D Q 5.5 1 V = 5.0 Vdc) (Note 3) GS Q 8.5 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 20 Adc, V = 0 Vdc) (Note 3) V 0.97 1.2 Vdc S GS SD (I = 20 Adc, V = 0 Vdc, T = 150C) 0.85 S GS J Reverse Recovery Time t 42 ns rr (I = 20 Adc, V = 0 Vdc, S GS t 30 a dI /dt = 100 A/ s) (Note 3) S t 12 b Reverse Recovery Stored Charge Q 0.066 C RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NTD20N06LG DPAK 75 Units / Rail (PbFree) NTD20N06L1G IPAK (Straight Lead) 75 Units / Rail (PbFree) NTD20N06LT4G DPAK 2500 / Tape & Reel (PbFree) NTDV20N06LT4G DPAK 2500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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