NTD20N06L, NTDV20N06L MOSFET Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V www.onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge V R TYP I MAX (BR)DSS DS(on) D circuits. 20 A 60 V 39 m 5.0 V (Note 1) Features AEC Q101 Qualified NTDV20N06L D These Devices are PbFree and are RoHS Compliant Typical Applications NChannel Power Supplies G Converters S Power Motor Controls 4 Bridge Circuits MAXIMUM RATINGS (T = 25C unless otherwise noted) J 4 Rating Symbol Value Unit 1 DraintoSource Voltage V 60 Vdc 2 1 DSS 2 3 3 DraintoGate Voltage (R = 10 M ) V 60 Vdc GS DGR DPAK IPAK GatetoSource Voltage Vdc CASE 369C CASE 369D Continuous V 15 GS STYLE 2 STYLE 2 Nonrepetitive (t 10 ms) p V 20 GS Drain Current MARKING DIAGRAMS Continuous T = 25C I 20 Adc A D & PIN ASSIGNMENTS Continuous T = 100C A I 10 D Single Pulse (t 10 s) p 4 4 I 60 Apk DM Drain Drain Total Power Dissipation T = 25C P 60 W A D Derate above 25C 0.40 W/C Total Power Dissipation T = 25C (Note 1) A 1.88 W Total Power Dissipation T = 25C (Note 2) A 1.36 W Operating and Storage Temperature Range T , T 55 to C J stg +175 2 1 3 Drain Single Pulse DraintoSource Avalanche E 128 mJ AS Gate Source Energy Starting T = 25C 1 2 3 J (V = 25 Vdc, V = 5.0 Vdc, Gate Drain Source DD GS L = 1.0 mH, I (pk) = 16 A, V = 60 Vdc) L DS A = Assembly Location* Thermal Resistance C/W Y = Year JunctiontoCase R 2.5 WW = Work Week JC JunctiontoAmbient (Note 1) R 80 20N6L = Device Code JA JunctiontoAmbient (Note 2) R 110 G = PbFree Package JA Maximum Lead Temperature for Soldering T 260 C * The Assembly Location code (A) is front side L Purposes, 1/8 in from case for 10 seconds optional. In cases where the Assembly Location is stamped in the package, the front side assembly Stresses exceeding those listed in the Maximum Ratings table may damage the code may be blank. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. When surface mounted to an FR4 board using 1 in pad size, (Cu Area 1.127 in ). ORDERING INFORMATION 2. When surface mounted to an FR4 board using recommended pad size, See detailed ordering and shipping information on page 2 of 2 (Cu Area 0.412 in ). this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: May, 2019 Rev. 5 NTD20N06L/D AYWW 20 N6LG AYWW 20 N6LGNTD20N06L, NTDV20N06L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 60 71.3 GS D 71.2 mV/C Temperature Coefficient (Positive) Zero Gate Voltage Drain Current I Adc DSS (V = 60 Vdc, V = 0 Vdc) 1.0 DS GS (V = 60 Vdc, V = 0 Vdc, T = 150C) 10 DS GS J GateBody Leakage Current (V = 15 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V Vdc GS(th) (V = V , I = 250 Adc) 1.0 1.6 2.0 DS GS D Threshold Temperature Coefficient (Negative) 4.6 mV/C Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 5.0 Vdc, I = 10 Adc) 39 48 GS D Static DraintoSource OnResistance (Note 3) V Vdc DS(on) (V = 5.0 Vdc, I = 20 Adc) 0.81 1.66 GS D (V = 5.0 Vdc, I = 10 Adc, T = 150C) 0.72 GS D J Forward Transconductance (Note 3) (V = 4.0 Vdc, I = 10 Adc) g 17.5 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 707 990 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 224 320 oss f = 1.0 MHz) Transfer Capacitance C 72 105 rss SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 9.6 20 ns d(on) (V = 30 Vdc, I = 20 Adc, DD D Rise Time t 98 200 r V = 5.0 Vdc, GS TurnOff Delay Time t 25 50 d(off) R = 9.1 ) (Note 3) G Fall Time t 62 120 f Gate Charge Q 16.6 32 nC T (V = 48 Vdc, I = 20 Adc, DS D Q 5.5 1 V = 5.0 Vdc) (Note 3) GS Q 8.5 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 20 Adc, V = 0 Vdc) (Note 3) V 0.97 1.2 Vdc S GS SD (I = 20 Adc, V = 0 Vdc, T = 150C) 0.85 S GS J Reverse Recovery Time t 42 ns rr (I = 20 Adc, V = 0 Vdc, S GS t 30 a dI /dt = 100 A/ s) (Note 3) S t 12 b Reverse Recovery Stored Charge Q 0.066 C RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NTD20N06LG DPAK 75 Units / Rail (PbFree) NTD20N06L1G IPAK (Straight Lead) 75 Units / Rail (PbFree) NTD20N06LT4G DPAK 2500 / Tape & Reel (PbFree) NTDV20N06LT4G DPAK 2500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2