X-On Electronics has gained recognition as a prominent supplier of NTD20N06T4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD20N06T4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD20N06T4G ON Semiconductor

NTD20N06T4G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTD20N06T4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 60V 20A N-Channel
Datasheet: NTD20N06T4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.177 ea
Line Total: USD 1.18 
Availability - 2153
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2153
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.177
10 : USD 0.9966
100 : USD 0.8536
500 : USD 0.7161
1000 : USD 0.7139
2500 : USD 0.6875
10000 : USD 0.6864

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
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Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTD20N06T4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD20N06T4G and other electronic components in the MOSFETs category and beyond.

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NTD20N06, NTDV20N06 MOSFET Power, N-Channel, DPAK 20 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features www.onsemi.com Lower R DS(on) Lower V DS(on) V R TYP I MAX (BR)DSS DS(on) D Lower Capacitances 60 V 20 A 37.5 m Lower Total Gate Charge Lower and Tighter V SD NChannel Lower Diode Reverse Recovery Time D Lower Reverse Recovery Stored Charge NTDV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable G These Devices are PbFree and are RoHS Compliant Typical Applications S Power Supplies 4 Converters Power Motor Controls 2 1 Bridge Circuits 3 MAXIMUM RATINGS (T = 25C unless otherwise noted) DPAK J CASE 369C Rating Symbol Value Unit STYLE 2 DraintoSource Voltage V 60 Vdc DSS DraintoGate Voltage (R = 10 M ) V 60 Vdc GS DGR MARKING DIAGRAM GatetoSource Voltage Vdc & PIN ASSIGNMENTS Continuous V 20 GS 4 Nonrepetitive (t 10 ms) V 30 p GS Drain Drain Current Adc Continuous T = 25C I 20 A D Continuous T = 100C I 10 A D Single Pulse (t 10 s) I 60 Apk p DM Total Power Dissipation T = 25C P 60 W A D Derate above 25C 0.40 W/C 2 Total Power Dissipation T = 25C (Note 1) 1.88 W A 1 3 Drain Total Power Dissipation T = 25C (Note 2) 1.36 W A Gate Source Operating and Storage Temperature Range T , T 55 to C J stg 175 A = Assembly Location* 20N06 = Device Code Single Pulse DraintoSource Avalanche E 170 mJ AS Y = Year Energy Starting T = 25C J WW = Work Week (V = 25 Vdc, V = 10 Vdc, DD GS G = PbFree Package L = 1.0 mH, I (pk) = 18.4 A, V = 60 Vdc) L DS Thermal Resistance C/W * The Assembly Location code (A) is front side JunctiontoCase R 2.5 JC optional. In cases where the Assembly Location is JunctiontoAmbient (Note 1) R 80 JA stamped in the package, the front side assembly JunctiontoAmbient (Note 2) R 110 JA code may be blank. Maximum Lead Temperature for Soldering T 260 C L Purposes, 1/8 from case for 10 seconds ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering and shipping information on page 3 of device. If any of these limits are exceeded, device functionality should not be this data sheet. assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: May, 2019 Rev. 10 NTD20N06/D AYWW 20 N06GNTD20N06, NTDV20N06 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. When surface mounted to an FR4 board using the 0.5 sq in drain pad size. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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