NTD4809NH, NVD4809NH
Power MOSFET
30 V, 58 A, Single NChannel, DPAK/IPAK
Features
Low R to Minimize Conduction Losses
DS(on)
Low Capacitance to Minimize Driver Losses
NTD4809NH, NVD4809NH
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction toCase (Drain) R 2.9 C/W
JC
Junction toTAB (Drain) R 3.5
JC TAB
JunctiontoAmbient Steady State (Note 1) R 74
JA
JunctiontoAmbient Steady State (Note 2) R 116
JA
1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V
(BR)DSS GS D
DraintoSource Breakdown Voltage V /T 25 mV/C
(BR)DSS J
Temperature Coefficient
Zero Gate Voltage Drain Current I T = 25C 1.0 A
DSS J
V = 0 V,
GS
V = 24 V
DS
T = 125C 10
J
GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA
GSS DS GS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V V = V , I = 250 A 1.5 2.1 2.5 V
GS(TH) GS DS D
Negative Threshold Temperature Coefficient V /T 5.7 mV/C
GS(TH) J
DraintoSource On Resistance R V = 10 to I = 30 A 7.0 9.0 m
DS(on) GS D
11.5 V
I = 15 A 7.0
D
V = 4.5 V I = 30 A 10.45 12.5
GS D
I = 15 A 9.95
D
Forward Transconductance g V = 15 V, I = 15 A 9.0 S
FS DS D
CHARGES AND CAPACITANCES
Input Capacitance C 1596 2155 pF
iss
V = 0 V, f = 1.0 MHz,
GS
Output Capacitance C 331 447
oss
V = 12 V
DS
Reverse Transfer Capacitance C 190 294
rss
nC
Total Gate Charge Q 12.5 15
G(TOT)
Threshold Gate Charge Q 2.4 3.6
G(TH)
V = 4.5 V, V = 15 V,
GS DS
I = 30 A
D
GatetoSource Charge Q 5.3 7.9
GS
GatetoDrain Charge Q 5.1 7.7
GD
Total Gate Charge Q V = 11.5 V, V = 15 V, 29.3 44 nC
G(TOT) GS DS
I = 30 A
D
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time t 12.0 18 ns
d(on)
Rise Time t 20 30
r
V = 4.5 V, V = 15 V,
GS DS
I = 15 A, R = 3.0
D G
Turn Off Delay Time t 14 21
d(off)
Fall Time t 5.0 7.5
f
TurnOn Delay Time t 7.0 10.4 ns
d(on)
Rise Time t 18 27
r
V = 11.5 V, V = 15 V,
GS DS
I = 15 A, R = 3.0
D G
Turn Off Delay Time t 22 33
d(off)
Fall Time t 3.0 4.6
f
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.