X-On Electronics has gained recognition as a prominent supplier of NTD4909NT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD4909NT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD4909NT4G ON Semiconductor

NTD4909NT4G electronic component of ON Semiconductor
NTD4909NT4G ON Semiconductor
NTD4909NT4G MOSFETs
NTD4909NT4G  Semiconductors

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See Product Specifications
Part No. NTD4909NT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET DPAK 30V 41A 8.0 mOhm
Datasheet: NTD4909NT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
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MOQ : 2500
Multiples : 2500
2500 : USD 0.2408
5000 : USD 0.2227
10000 : USD 0.2152
25000 : USD 0.2043
50000 : USD 0.199
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Obsolete
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MOQ : 2500
Multiples : 2500
2500 : USD 0.248
5000 : USD 0.2239
12500 : USD 0.2159
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MOQ : 1
Multiples : 1
1 : USD 0.6693
10 : USD 0.5741
25 : USD 0.5358
100 : USD 0.398
500 : USD 0.3108
1000 : USD 0.2527
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MOQ : 1259
Multiples : 1
1259 : USD 0.243
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MOQ : 1
Multiples : 1
1 : USD 1.7228
10 : USD 0.821
100 : USD 0.4246
500 : USD 0.3608
1000 : USD 0.3148
2500 : USD 0.2886
5000 : USD 0.2802
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0
MOQ : 105
Multiples : 1
105 : USD 0.1851
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MOQ : 37
Multiples : 1
37 : USD 0.6347
50 : USD 0.2738
100 : USD 0.2157
250 : USD 0.2157
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Obsolete
0
MOQ : 37
Multiples : 1
37 : USD 0.3055
100 : USD 0.2497
250 : USD 0.2266
500 : USD 0.2221
1000 : USD 0.2221
3000 : USD 0.2221
N/A

Obsolete
0
MOQ : 5000
Multiples : 5000
5000 : USD 0.2567
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Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.2128
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Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTD4909NT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD4909NT4G and other electronic components in the MOSFETs category and beyond.

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NTD4909N MOSFET Power, Single, N-Channel, DPAK/IPAK 30 V, 41 A Features Low R to Minimize Conduction Losses NTD4909N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 5.1 C/W JC JunctiontoTAB (Drain) R 4.3 JC TAB JunctiontoAmbient Steady State (Note 3) R 58.2 JA JunctiontoAmbient Steady State (Note 4) R 110 JA 3. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 15 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS V = 0 V, J GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.0 1.7 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 6.5 8.0 m DS(on) GS D I = 15 A 6.5 D V = 4.5 V I = 30 A 9.5 12 GS D I = 15 A 9.5 D Forward Transconductance gFS V = 1.5 V, I = 30 A 52 S DS D CHARGES AND CAPACITANCES Input Capacitance C 1314 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 487 oss V = 15 V DS Reverse Transfer Capacitance C 17.4 rss nC Total Gate Charge Q 7.6 G(TOT) Threshold Gate Charge Q 2.1 G(TH) V = 4.5 V, V = 15 V, GS DS I = 30 A D GatetoSource Charge Q 4.3 GS GatetoDrain Charge Q 1.3 GD Total Gate Charge Q V = 10 V, V = 15 V, 17.5 nC G(TOT) GS DS I = 30 A D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 11 ns d(on) Rise Time t 21 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G TurnOff Delay Time t 17 d(off) Fall Time t 2.7 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. 7. Assume terminal length of 110 mils.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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