X-On Electronics has gained recognition as a prominent supplier of NTD4960NT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD4960NT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD4960NT4G ON Semiconductor

NTD4960NT4G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTD4960NT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 11.1A 3-Pin(2+Tab) DPAK T/R
Datasheet: NTD4960NT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
534: USD 0.3041 ea
Line Total: USD 162.39 
Availability - 0
MOQ: 534  Multiples: 534
Pack Size: 534
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.3041

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 534
Multiples : 534
534 : USD 0.3041

   
Manufacturer
Product Category
Packaging
Channel Mode
Mounting
Operating Temp Range
Pin Count
Power Dissipation
Number Of Elements
Continuous Drain Current
Package Type
Operating Temperature Classification
Gate-Source Voltage Max
Rad Hardened
Polarity
Type
Drain-Source On-Volt
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We are delighted to provide the NTD4960NT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD4960NT4G and other electronic components in the MOSFETs category and beyond.

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NTD4960N Power MOSFET 30 V, 55 A, Single NChannel, DPAK/IPAK Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NTD4960N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction toCase (Drain) R 3 C/W  JC Junction toTAB (Drain) R 3.5 JCTAB JunctiontoAmbient Steady State (Note 1) R 74.5 JA JunctiontoAmbient Steady State (Note 2) R 116.5 JA 1. Surfacemounted on FR4 board using 1 sq in pad, 1 oz Cu. 2. Surface mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 25 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 5.0 GS(TH) J mV/C Coefficient DraintoSource On Resistance R V = 10 V I = 30 A 6.1 8.0 m DS(on) GS D I = 15 A 6.1 D V = 4.5 V I = 30 A 10 12.7 m GS D I = 15 A 10 D Forward Transconductance g V = 1.5 V, I = 15 A 48 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 1300 ISS Output Capacitance C 342 V = 0 V, f = 1.0 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 169 RSS Total Gate Charge Q 11 G(TOT) Threshold Gate Charge Q 1.2 G(TH) V = 4.5 V, V = 15 V, I = 30 A nC GS DS D GatetoSource Charge Q 4.0 GS GatetoDrain Charge Q 4.7 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 30 A 22 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 12 d(ON) Rise Time t 20 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0  D G Turn Off Delay Time t 15 d(OFF) Fall Time t 4.0 f 3. Pulse Test: pulse width  300 s, duty cycle  2%. 4. Switching characteristics are independent of operating junction temperatures. 5. Assume terminal length of 110 mils.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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