NTD5414N, NVD5414N
Power MOSFET
24 A, 60 V Single NChannel DPAK
Features
Low R
DS(on)
High Current Capability NTD5414N, NVD5414N
ELECTRICAL CHARACTERISTICS (T = 25C Unless otherwise specified)
J
Characteristics Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V
(BR)DSS
DS D
DraintoSource Breakdown Voltage Temper- V /T 67.3 mV/C
(BR)DSS J
ature Coefficient
Zero Gate Voltage Drain Current I V = 0 V A
T = 25C 1.0
DSS GS
J
V = 60 V
DS
T = 150C 50
J
GateBody Leakage Current I V = 0 V, V = 20 V 100 nA
GSS DS GS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage V V = V , I = 250 A 2.0 3.2 4.0 V
GS(th)
GS DS D
Negative Threshold Temperature Coefficient V /T 0.74 mV/C
GS(th) J
DraintoSource OnVoltage V V = 10 V, I = 24 A 0.7 1.16 V
DS(on)
GS D
V = 10 V, I = 12 A, 150C 0.7
GS D
DraintoSource OnResistance R V = 10 V, I = 24 A 28.4 37 m
DS(on) GS D
Forward Transconductance g V = 15 V, I = 20 A 24 S
FS DS D
CHARGES, CAPACITANCES & GATE RESISTANCE
V = 25 V, V = 0 V, pF
Input Capacitance C 800 1200
DS GS
iss
f = 1 MHz
Output Capacitance C 165
oss
Transfer Capacitance C 75
rss
Total Gate Charge Q V = 10 V, V = 48 V, 25 48 nC
GS DS
G(TOT)
I = 24 A
D
Threshold Gate Charge Q 1.1
G(TH)
GatetoSource Charge Q 4.8
GS
GatetoDrain Charge Q 11.3
GD
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)
GS
TurnOn Delay Time t V = 10 V, V = 48 V, 12 ns
GS DD
d(on)
I = 24 A, R = 9.1
D G
Rise Time t 58
r
TurnOff Delay Time t 47
d(off)
Fall Time t 69
f
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage (Note 2) V V = 0 V T = 25C 0.92 1.15 V
SD GS
J
I = 24 A
S
T = 125C 0.8
J
I = 24 A , V = 0 V , ns
Reverse Recovery Time t 45.7
S dc GS dc
rr
dI /dt = 100 A/s
S
Charge Time t 31.7
a
Discharge Time t 14
b
Reverse Recovery Stored Charge Q 76 nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.