NTE2396 NTE

NTE2396 MOSFET NCh, Enhancement Mode High Speed Switch TO220 Type Package Features: Dynamic dv/dt Rating D Repetitive Avalanche Rated Current Sense +175 C Operating Temperature Fast Switching Ease of Paralleling G Simple Drive Requirements S Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C .................................................................. 28A C T = +100 C ................................................................. 20A C Pulsed Drain Current (Note 1), I .................................................. 110A DM Power Dissipation (T = +25 C), P ................................................ 150W C D Derate Linearly Above 25 C ............................................... 1.0W/ C GatetoSource Voltage, V ...................................................... 20V GS Single Pulse Avalanche Energy (Note 2), E ....................................... 100mJ AS Avalanche Current (Note 1), I ...................................................... 28A AR Repetitive Avalanche Energy (Note 1), E .......................................... 15mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 5.5V/ns Operating Junction Temperature Range, T .................................. 55 to +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R ..................................... 1.0 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 62 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ............ 0.5 C/W thCS Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. V = 25V, starting T = +25 C, L = 191 H, R = 25 , I = 28A DD J G AS Note 3. I 28A, di/dt 170A/ s, V V , T +175 C SD DD (BR)DSS J Rev. 714Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 250 A 100 V (BR)DSS GS D Breakdown Voltage Temp. Coefficient V Reference to +25 C, I = 1mA 0.13 V/ C (BR)DSS D T J Static DraintoSource OnResistance R V = 10V, I = 17A, Note 4 0.077 DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Forward Transconductance g V = 50V, I = 17A, Note 4 5.8 mhos fs DS D DraintoSource Leakage Current I V = 100V, V = 0V 25 A DSS DS GS V = 80V, V = 0V, T = +150 C 250 A DS GS J GatetoSource Forward Leakage I V = 20V 100 nA GSS GS GatetoSource Reverse Leakage I V = 20V 100 nA GSS GS Total Gate Charge Q I = 29A, V = 80V, V = 10V, 69 nC g D DS GS Note 4 GatetoSource Charge Q 13 nC gs GatetoDrain (Miller) Charge Q 37 nC gd TurnOn Delay Time t 13 ns V = 50V, I = 29A, R = 9.1 , d(on) DD D G R = 1.7 , Note 4 D Rise Time t 77 ns r TurnOff Delay Time t 40 ns d(off) Fall Time t 48 ns f Internal Drain Inductance L Between lead, .250in. (6.0) mm from 4.5 nH D package and center of die contact Internal Source Inductance L 7.5 nH S Input Capacitance C 1300 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 630 pF oss Reverse Transfer Capacitance C 130 pF rss SourceDrain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I 28 A S Pulsed Source Current (Body Diode) I Note 1 110 A SM Diode Forward Voltage V T = +25 C, I = 28A, V = 0V, 2.5 V SD J S GS Note 4 Reverse Recovery Time t 120 260 ns T = +25 C, I = 29A, rr J F di/dt = 100A/ s, Note 4 Reverse Recovery Charge Q 0.52 1.2 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible (turnon is dominated by L +L ) on S D Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 4. Pulse width 300 s duty cycle 2%.