NTE2399 NTE

NTE2399 MOSFET NCh, Enhancement Mode High Speed Switch TO220 Type Package D Features: Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching G Ease of Paralleling Simple Drive Requirements S Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C ................................................................ 3.1A C T = +100 C ................................................................ 2.0A C Pulsed Drain Current (Note 1), I ................................................... 12A DM Power Dissipation (T = +25 C), P ................................................ 125W C D Derate Linearly Above 25 C ............................................... 1.0W/ C GatetoSource Voltage, V ....................................................... 20 GS Single Pulse Avalanche Energy (Note 2), E ....................................... 280mJ AS Avalanche Current (Note 1), I ..................................................... 3.1A AR Repetitive Avalanche Energy (Note 1), E .......................................... 13mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 1.0V/ns Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R ..................................... 1.0 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 62 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ............ 0.5 C/W thCS Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. V = 50V, starting T = +25 C, L = 55mH, R = 25 , I = 3.1A DD J G AS Note 3. I 3.1A, di/dt 80A/ s, V 600V, T +150 C SD DD J Note 4. Pules Width 300 s, Duty Cycle 2%. Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 250 A 1000 V (BR)DSS GS D Breakdown Voltage Temp. Coefficient V Reference to +25 C, I = 1mA 1.4 V/ C (BR)DSS D T J Static DraintoSource OnResistance R V = 10V, I = 1.9A, Note 4 0.50 DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Forward Transconductance g V = 100V, I = 1.9A, Note4 2.1 mhos fs DS D DraintoSource Leakage Current I V = 1000V, V = 0V 100 A DSS DS GS V = 800V, V = 0V, T = +125 C 500 A DS GS J GatetoSource Forward Leakage I V = 20V 100 nA GSS GS GatetoSource Reverse Leakage I V = 20V 100 nA GSS GS Total Gate Charge Q I = 3.1A, V = 400V, V = 10V, 80 nC g D DS GS Note 4 GatetoSource Charge Q 10 nC gs GatetoDrain (Miller) Charge Q 42 nC gd TurnOn Delay Time t 12 ns V = 500V, I = 3.1A, R = 12 , d(on) DD D G R = 170 , Note 4 D Rise Time t 25 ns r TurnOff Delay Time t 89 ns d(off) Fall Time t 29 ns f Internal Drain Inductance L Between lead, .250in. (6.0) mm from 4.5 nH D package and center of die contact Internal Source Inductance L 7.5 nH S Input Capacitance C 980 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 140 pF oss Reverse Transfer Capacitance C 50 pF rss SourceDrain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I 3.1 A S Pulsed Source Current (Body Diode) I Note 1 12 A SM Diode Forward Voltage V T = +25 C, I = 3.1A, V = 0V, 1.8 V SD J S GS Note 4 Reverse Recovery Time t 410 620 ns T = +25 C, I = 3.1A, rr J F di/dt = 100A/ s, Note 4 Reverse Recovery Charge Q 1.3 2.0 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible (turnon is dominated by L +L ) on S D Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 4. Pulse width 300 s duty cycle 2%.