NTE2375 MOSFET NCh, Enhancement Mode High Speed Switch TO247 Type package D Features: Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole G Fast Switching Ease of Paralleling S Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C .................................................................. 41A C T = +100 C ................................................................. 29A C Pulsed Drain Current (Note 1), I .................................................. 120A DM Power Dissipation (T = +25 C), P ................................................ 230W C D Derate Linearly Above 25 C ............................................... 1.5W/ C GatetoSource Voltage, V ...................................................... 20V GS Single Pulse Avalanche Energy (Note 2), E ....................................... 830mJ AS Avalanche Current (Note 1), I ...................................................... 41A AR Repetitive Avalanche Energy (Note 1), E .......................................... 19mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 5.5V/ns Operating Junction Temperature Range, T .................................. 55 to +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R .................................... 0.65 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 40 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ........... 0.24 C/W thCS Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. V = 25V, starting T = +25 C, L = 740 H, R = 25 , I = 41A DD J G AS Note 3. I 41A, di/dt 300A/ s, V V , T +175 C SD DD (BR)DSS J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 250 A 100 V (BR)DSS GS D Breakdown Voltage Temp. Coefficient V Reference to +25 C, I = 1mA 0.14 V/ C (BR)DSS D T J Static DraintoSource OnResistance R V = 10V, I = 25A, Note 4 0.055 DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Forward Transconductance g V = 25V, I = 25A, Note 4 13 mhos fs DS D DraintoSource Leakage Current I V = 100V, V = 0V 25 A DSS DS GS V = 80V, V = 0V, T = +150 C 250 A DS GS J GatetoSource Forward Leakage I V = 20V 100 nA GSS GS GatetoSource Reverse Leakage I V = 20V 100 nA GSS GS Total Gate Charge Q I = 41A, V = 80V, V = 10V, 140 nC g D DS GS Note 4 GatetoSource Charge Q 29 nC gs GatetoDrain (Miller) Charge Q 68 nC gd TurnOn Delay Time t 16 ns V = 50V, I = 41A, R = 6.2 , d(on) DD D G R = 1.2 , Note 4 D Rise Time t 120 ns r TurnOff Delay Time t 60 ns d(off) Fall Time t 81 ns f Internal Drain Inductance L Between lead, .250in. (6.0) mm from 5.0 nH D package and center of die contact Internal Source Inductance L 13.0 nH S Input Capacitance C 2800 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 1100 pF oss Reverse Transfer Capaticance C 280 pF rss SourceDrain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I 41 A S Pulsed Source Current (Body Diode) I Note 1 160 A SM Diode Forward Voltage V T = +25 C, I = 41A, V = 0V, 2.5 V SD J S GS Note 4 Reverse Recovery Time t 220 330 ns T = +25 C, I = 41A, rr J F di/dt = 100A/ s, Note 4 Reverse Recovery Charge Q 1.9 2.9 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible (turnon is dominated by L +L ) on S D Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 4. Pulse width 300 s duty cycle 2%.