X-On Electronics has gained recognition as a prominent supplier of NTE2375 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE2375 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE2375 NTE

NTE2375 electronic component of NTE
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Part No.NTE2375
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 100V; 41A; TO247
Datasheet: NTE2375 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 15.4027 ea
Line Total: USD 77.01 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 5
Multiples : 1
5 : USD 15.4027
50 : USD 9.9283
100 : USD 9.1594
200 : USD 8.5131
500 : USD 7.9449

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 17.78
2 : USD 11.662
4 : USD 11.032

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2375 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2375 and other electronic components in the MOSFETs category and beyond.

Image Part-Description
Stock Image NTE238
Transistor: NPN; bipolar; 1.5kV; 8A; 100W; TO3
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2376
Transistor: N-MOSFET; 200V; 30A; TO247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2382
Transistor: N-MOSFET; 100V; 8A; TO220
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2383
Transistor: P-MOSFET; 100V; 8A; TO220
Stock : 23
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2377
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2378
Transistor: N-MOSFET; 900V; 5A; TO3P
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2379
Transistor: N-MOSFET; 600V; 6.2A; TO220
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2380
Transistor: N-MOSFET; 500V; 2A; TO220
Stock : 357
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2381
Transistor: P-MOSFET; 500V; 2A; TO220
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2384
Transistor: N-MOSFET; 900V; 6A; TO3
Stock : 4
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image NTE2377
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2378
Transistor: N-MOSFET; 900V; 5A; TO3P
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2379
Transistor: N-MOSFET; 600V; 6.2A; TO220
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2380
Transistor: N-MOSFET; 500V; 2A; TO220
Stock : 357
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2381
Transistor: P-MOSFET; 500V; 2A; TO220
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2384
Transistor: N-MOSFET; 900V; 6A; TO3
Stock : 4
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2386
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) TO-3
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2392
Transistor: N-MOSFET; 100V; 33A; TO3
Stock : 2
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2398
Transistor: N-MOSFET; 500V; 4.5A; TO220
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2900
Transistor: N-MOSFET; 250V; 14A; TO220
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NTE2375 MOSFET NCh, Enhancement Mode High Speed Switch TO247 Type package D Features: Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole G Fast Switching Ease of Paralleling S Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C .................................................................. 41A C T = +100 C ................................................................. 29A C Pulsed Drain Current (Note 1), I .................................................. 120A DM Power Dissipation (T = +25 C), P ................................................ 230W C D Derate Linearly Above 25 C ............................................... 1.5W/ C GatetoSource Voltage, V ...................................................... 20V GS Single Pulse Avalanche Energy (Note 2), E ....................................... 830mJ AS Avalanche Current (Note 1), I ...................................................... 41A AR Repetitive Avalanche Energy (Note 1), E .......................................... 19mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 5.5V/ns Operating Junction Temperature Range, T .................................. 55 to +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R .................................... 0.65 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 40 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ........... 0.24 C/W thCS Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. V = 25V, starting T = +25 C, L = 740 H, R = 25 , I = 41A DD J G AS Note 3. I 41A, di/dt 300A/ s, V V , T +175 C SD DD (BR)DSS J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 250 A 100 V (BR)DSS GS D Breakdown Voltage Temp. Coefficient V Reference to +25 C, I = 1mA 0.14 V/ C (BR)DSS D T J Static DraintoSource OnResistance R V = 10V, I = 25A, Note 4 0.055 DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Forward Transconductance g V = 25V, I = 25A, Note 4 13 mhos fs DS D DraintoSource Leakage Current I V = 100V, V = 0V 25 A DSS DS GS V = 80V, V = 0V, T = +150 C 250 A DS GS J GatetoSource Forward Leakage I V = 20V 100 nA GSS GS GatetoSource Reverse Leakage I V = 20V 100 nA GSS GS Total Gate Charge Q I = 41A, V = 80V, V = 10V, 140 nC g D DS GS Note 4 GatetoSource Charge Q 29 nC gs GatetoDrain (Miller) Charge Q 68 nC gd TurnOn Delay Time t 16 ns V = 50V, I = 41A, R = 6.2 , d(on) DD D G R = 1.2 , Note 4 D Rise Time t 120 ns r TurnOff Delay Time t 60 ns d(off) Fall Time t 81 ns f Internal Drain Inductance L Between lead, .250in. (6.0) mm from 5.0 nH D package and center of die contact Internal Source Inductance L 13.0 nH S Input Capacitance C 2800 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 1100 pF oss Reverse Transfer Capaticance C 280 pF rss SourceDrain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I 41 A S Pulsed Source Current (Body Diode) I Note 1 160 A SM Diode Forward Voltage V T = +25 C, I = 41A, V = 0V, 2.5 V SD J S GS Note 4 Reverse Recovery Time t 220 330 ns T = +25 C, I = 41A, rr J F di/dt = 100A/ s, Note 4 Reverse Recovery Charge Q 1.9 2.9 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible (turnon is dominated by L +L ) on S D Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 4. Pulse width 300 s duty cycle 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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