NTE2392 MOSFET NChannel Enhancement Mode, High Speed Switch TO3 Type Package Description: The NTE2392 is an NChannel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: Fast Switching D Low Drive Current Case Ease of Paralleling No Second Breakdown G S Excellent Temperature Stability Absolute Maximum Ratings: DrainSource Voltage (Note 1), V ................................................. 100V DS DrainGate Voltage (R = 20kNote 1), V ...................................... 100V GS DGR GateSource Voltage, V ......................................................... 20V GS Pulsed Drain Current (Note 3), I .................................................. 160A DM Clamped Inductive Current (L = 100 H), I .......................................... 160A LM Continuous Drain Current, I D T = +25C .................................................................. 40A C T = +100C ................................................................. 25A C Total Dissipation (T = +25C), P ................................................. 150W C tot Derate Above 25 C ....................................................... 1.2W/ C Operating Junction Temperature Range, T .................................. 55 to +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Lead Temperature (During Soldering, 0.063 in. (1.6mm) from case, 10sec), T .......... +300 C L Maximum Thermal Resistance, Junction toCase, R ........................... 0.83 C/W thJC Typical Thermal Resistance, Case toSink (Note 4), R .......................... 0.1 C/W thCS Maximum Thermal Resistance, Junction toAmbient, R ......................... 30 C/W thJA Note 1. T = +25 to +150C J Note 2. Pulse test: Pulse Width 300s, Duty Cycle 2%. Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Mounting surface flat, smooth, and greased. Rev. 1218Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V I = 250A, V = 0 100 V (BR)DSS D GS ZeroGate Voltage Drain Current I V = 0, V = 100V 250 A DSS GS DS V = 0, V = 80V, 1000 A GS DS T = +125C C GateBody Leakage Current I V = 0, V = 20V 100 nA GSS DS GS Gate Threshold Voltage V V = V , I = 250A 2 4 V GS(th) DS GS D OnState Drain Current I V > I x R , 40 A D(on) DS D(on) DS(on) max V = 10V, Note 2 GS Static DrainSource On Resistance R V = 10V, I = 20A, Note 2 0.045 0.055 W DS(on) GS D Forward Transconductance g V > I x R , 9 11 mho fs DS D(on) DS(on) max I = 20A, Note 2 D Input Capacitance C 2000 3000 pf V = 25V, V = 0, f = 1MHz iss DS GS Output Capacitance C 1000 1500 pf oss Reverse Transfer Capacitance C 350 500 pf rss TurnOn Time t 35 ns V = 24V, I = 20A, R = 4.7 d(on) DD D I Rise Time t 100 ns r TurnOff Delay Time t 125 ns d(off) Fall Time t 100 ns f Total Gate Charge Q 63 120 nC V = 10V, I = 50A, g GS D V = 80V DS GateSource Charge Q 27 nC gs GateDrain (Miller) Charge Q 36 nC gd Internal Drain Inductance L Measured between the contact 5.0 nH D screw on header that is closer to source and gate pins and center of die Internal Source Inductance L Measured from the source pin, 12.5 nH S 6mm (.25 in.) from header SourceDrain Diode Ratings and Characteristics Continuous Source Current I 40 A S (Body Diode) Pulsed Source Current (Body Diode) I Note 3 160 A SM Forward ON Voltage V I = 40A, V = 0, T = +25C, 2.5 V SD S GS J Note 3 Reverse Recovery Time t 600 ns I = 40A, di /dt = 100A/s, rr F F T = +150C J Reverse Recovered Charge Q 3.3 C rr Note 2. Pulse test: Pulse Width 300s, Duty Cycle 2%. Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature.