NTE2902 N-Channel Silicon Junction Field Effect Transistor Description: The NTE2902 is a field effect transistor in a TO92 type package designed for use in VHF/UHF amplifier applications. Absolute Maximum Ratings: (Note 1) Drain-Source Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V DS Gate-Source Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V GS Forward Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA GF Total Device Dissipation (T = +25 C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW A D Derate Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +125 C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150 C stg Note 1. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Gate-Source Breakdown Voltage V I = 1.0A, V = 0 -25 - - V (BR)GSS G DS Gate Reverse Current I T = +25C - - -1.0 nA V = 15V, GSS GS A V = 0 DS T = +125 C - - -1.0 A A Gate-Source Cutoff Voltage V V = 10V, I = 1nA -2.0 - -6.5 V GS(off) DS D ON Characteristics Zero-Gate Voltage Drain Current I V = 10V, V = 0, Note 2 24 - 60 mA DSS DS GS Gate-Source Forward Voltage V V = 0, I = 1mA - - 1.0 V GS(f) DS G Note 2. Pulse test: Pulse Width 300 s, Duty Cycle 3%.Electrical Characteristics (Cont d): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Small-Signal Characteristics Common- Source Input Conductance Re(y ) V = 10V, f = 100MHz - 0.5 - mmhos is DS I = 10mA D Re(y ) f = 100MHz - 0.25 - mmhos Common-Source Output os Conductance g f = 1kHz - - 250 mhos os Common-Gate Power Gain G f = 100MHz - 16 - dB pg Common-Source Forward Re(y ) f = 100MHz - 12 - mmhos fs Transconductance g f = 1kHz 8000 - 18000 mhos fs Common-Gate Input Conductance Re(y ) f = 100MHz - 12 - mmhos ig Common-Gate Forward g V = 10V, I = 10mA, - 150 - mhos fg DS D Transconductance f = 1kHz Common-Gate Output Conductance g - 150 - mhos og Gate-Drain Capacitance C V = 0, V = -10V, - 1.8 2.5 pF gd DS GS f = 1MHz Gate-Source Capacitance C - 4.3 5.0 pF gs Functional Characteristics Equivalent Short-Circuit Input e V = 10V, I = 10mA, - 10 - nV/ Hz n DS D Noise Voltage f = 100Hz .135 (3.45) Min .210 (5.33) Seating Plane Max .500 .021 (.445) Dia Max (12.7) Min G S D .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max