NTE2909 NTE

NTE2909 MOSFET NChannel, Enhancement Mode High Speed Switch Description: The NTE2909 is a Power MOSFET in a TO220 type package that utilizes advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications. D Features: Ultra Low ON Resistance Dynamic dv/dt Rating +175 C Operating Temperature Fast Switching G Fully Avalanche Rated S Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C .................................................................. 57A C T = +100 C ................................................................. 40A C Pulsed Drain Current (Note 1), I .................................................. 230A DM Power Dissipation (T = +25 C), P ................................................ 200W C D Derate Linearly Above 25 C ............................................... 1.3W/ C GatetoSource Voltage, V ...................................................... 20V GS Avalanche Current (Note 1), I ...................................................... 28A AR Repetitive Avalanche Energy (Note 1), E .......................................... 20mJ AR Peak Diode Recovery dv/dt (Note 2), dv/dt .......................................... 5.8V/ns Operating Junction Temperature Range, T .................................. 55 to +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R .................................... 0.75 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 62 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ............ 0.5 C/W thCS Note 1. Starting T = +25 C, L = 0.70mH, R = 25 , I = 28A, V = 10V. J G AS GS Note 2. I 28A, di/dt 380A/ s, V V , T +175 C SD DD (BR)DSS J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 250 A 100 V (BR)DSS GS D Breakdown Voltage Temp. Coefficient V Reference to +25 C, I = 1mA 0.13 V/ C (BR)DSS D T J Static DraintoSource OnResistance R V = 10V, I = 28A, Note 3 23 m DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Forward Transconductance g V = 25V, I = 280A, Note 3 32 S fs DS D DraintoSource Leakage Current I V = 100V, V = 0V 25 A DSS DS GS V = 80V, V = 0V, T = +150 C 250 A DS GS J GatetoSource Forward Leakage I V = 20V 100 nA GSS GS GatetoSource Reverse Leakage I V = 20V 100 nA GSS GS Total Gate Charge Q I = 28A, V = 80V, V = 10V 130 nC g D DS GS GatetoSource Charge Q 26 nC gs GatetoDrain (Miller) Charge Q 43 nC gd TurnOn Delay Time t V = 50V, I = 28A, R = 2.5 , 12 ns d(on) DD D G V = 10V, Note 3 GS Rise Time t 58 ns r TurnOff Delay Time t 45 ns d(off) Fall Time t 45 ns f Internal Drain Inductance L Between lead, .250in. (6.0) mm from 4.5 nH D package and center of die contact Internal Source Inductance L 7.5 nH S Input Capacitance C 3130 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 410 pF oss Reverse Transfer Capacitance C 72 pF rss Single Pulse Avalanche Energy E I = 28A, L = 0.70mH, Note 1 1060 280 mJ AS AS Note 4 Note 5 SourceDrain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I 57 A S Pulsed Source Current (Body Diode) I Note 6 230 A SM Diode Forward Voltage V T = +25 C, I = 28A, V = 0V, 1.2 V SD J S GS Note 3 Reverse Recovery Time t 140 220 ns T = +25 C, I = 28A, rr J F di/dt = 100A/ s, Note 3 Reverse Recovery Charge Q 670 1010 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible (turnon is dominated by L +L ) on S D Note 1. Starting T = +25 C, L = 0.70mH, R = 25 , I = 28A, V = 10V. J G AS GS Note 2. I 28A, di/dt 380A/ s, V V , T +175 C SD DD (BR)DSS J Note 3. Pulse width 400 s duty cycle 2%. Note 4. This is a typical value at device destruction and represents operation outside rated limits. Note 5. This is a calculated value limited to T = +175 C. J Note 6. Repetitive rating: pulse width limited by max. junction temperature.