NTE2907 MOSFET NChannel, Enhancement Mode High Speed Switch Features: Low Drain Source ON Resistance D High Forward Transfer Admittance Low Leakage Current Applications: G High Current, High Speed Switching Applications Chopper Regulator S DCDC Converter Motor Drive Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A DrainSource Voltage, V ........................................................ 600V DSS DrainGate Voltage (R = 20k ), V ............................................. 600V GS DGR GateSource Voltage, V ........................................................ 30V GSS Continuous Drain Current, I D Continuous .................................................................. 10A Pulsed ...................................................................... 40A Drain Power Dissipation (T = +25 C), P ............................................ 45W C D Single Pulse Avalanche Energy (Note 1), E ....................................... 363mJ AS Avalanche Current, I .............................................................. 10A AR Repetitive Avalanche Energy (Note 2), E .......................................... 5.0mJ AR Channel Temperature, T ........................................................ +150 C ch Storage Temperature Range, T .......................................... 55 to +150 C stg Thermal Resistance, Junction toCase, R .................................... 2.78 C/W thJC Thermal Resistance, Junction toAmbient, R .................................. 62.5 C/W thJA Note 1. V = 90V, Starting T = +25 C, L = 6.36mH, R = 25 , I = 10A. DD ch G AR Note 2. Repetitive Rating: Pulse Width limited by Max. Junction Temperature. Rev. 1213Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gate Leakage Current I V = 0V, V = 25V 10 A GSS DS GS GateSource Breakdown Voltage V V = 0V, I = 10 A 30 V (BR)GSS DS G Drain CutOff Current I V = 600, V = 0V 100 A DSS DS GS DrainSource Breakdown Voltage V V = 0V, I = 10mA 600 V (BR)DSS GS D Gate Threshold Voltage V V = 10V, I = 1mA 2.0 4.0 V GS(th) DS D DrainSource ON Resistance R V = 10V, I = 5A 0.54 0.75 DS(on) GS D Forward Transfer Admittance Y V = 10V, I = 5A 3.0 9.0 S fs DS D Input Capacitance C V = 10V, V = 0V, f = 1MHz 2040 pF iss DS GS Output Capacitance C 590 pF oss Reverse Transfer Capacitance C 230 pF rss TurnOn Time t V = 200V, V = 10V, I = 5A, 58 ns d(on) DD GS D R = 40 , V : t , t < 5ns, Duty 1%, L IN r f Rise Time t 22 ns r t = 10 s w TurnOff Time t 190 ns d(off) Fall Time t 36 ns f Total Gate Charge Q V = 400V, V = 10V, I = 10A 45 nC g DD GS D GateSource Charge Q 25 nC gs GateDrain (Miller) Charge Q 20 nC gd Continuous Drain Reverse Current I 10 A DR Pulse Drain Reverse Current I 40 A DRP Diode Forward Voltage V I = 10A, V = 0V 1.7 V DSF DR GS Reverse Recovery Time t I = 10A, V = 0V, dI /dt = 100A/ s 1300 ns rr DR GS DR Reverse Recovery Charge Q 16 C rr .177 (4.5) .126 (3.2) Dia Max .106 (2.7) .405 (10.3) Max .272 (6.9) .622 (15.0) GD S .220 (5.6) Max .512 (13.0) Min .100 (2.54) .102 (2.6)