X-On Electronics has gained recognition as a prominent supplier of NTE2907 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE2907 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE2907 NTE

NTE2907 electronic component of NTE
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See Product Specifications
Part No.NTE2907
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 600V; 10A; TO220FP
Datasheet: NTE2907 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 10.665 ea
Line Total: USD 106.65 
Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 1
10 : USD 10.665
50 : USD 7.452
100 : USD 6.8796
200 : USD 6.3828
500 : USD 5.9616

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 13.3657
2 : USD 8.7521
5 : USD 8.2773

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2907 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2907 and other electronic components in the MOSFETs category and beyond.

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NTE2907 MOSFET NChannel, Enhancement Mode High Speed Switch Features: Low Drain Source ON Resistance D High Forward Transfer Admittance Low Leakage Current Applications: G High Current, High Speed Switching Applications Chopper Regulator S DCDC Converter Motor Drive Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A DrainSource Voltage, V ........................................................ 600V DSS DrainGate Voltage (R = 20k ), V ............................................. 600V GS DGR GateSource Voltage, V ........................................................ 30V GSS Continuous Drain Current, I D Continuous .................................................................. 10A Pulsed ...................................................................... 40A Drain Power Dissipation (T = +25 C), P ............................................ 45W C D Single Pulse Avalanche Energy (Note 1), E ....................................... 363mJ AS Avalanche Current, I .............................................................. 10A AR Repetitive Avalanche Energy (Note 2), E .......................................... 5.0mJ AR Channel Temperature, T ........................................................ +150 C ch Storage Temperature Range, T .......................................... 55 to +150 C stg Thermal Resistance, Junction toCase, R .................................... 2.78 C/W thJC Thermal Resistance, Junction toAmbient, R .................................. 62.5 C/W thJA Note 1. V = 90V, Starting T = +25 C, L = 6.36mH, R = 25 , I = 10A. DD ch G AR Note 2. Repetitive Rating: Pulse Width limited by Max. Junction Temperature. Rev. 1213Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gate Leakage Current I V = 0V, V = 25V 10 A GSS DS GS GateSource Breakdown Voltage V V = 0V, I = 10 A 30 V (BR)GSS DS G Drain CutOff Current I V = 600, V = 0V 100 A DSS DS GS DrainSource Breakdown Voltage V V = 0V, I = 10mA 600 V (BR)DSS GS D Gate Threshold Voltage V V = 10V, I = 1mA 2.0 4.0 V GS(th) DS D DrainSource ON Resistance R V = 10V, I = 5A 0.54 0.75 DS(on) GS D Forward Transfer Admittance Y V = 10V, I = 5A 3.0 9.0 S fs DS D Input Capacitance C V = 10V, V = 0V, f = 1MHz 2040 pF iss DS GS Output Capacitance C 590 pF oss Reverse Transfer Capacitance C 230 pF rss TurnOn Time t V = 200V, V = 10V, I = 5A, 58 ns d(on) DD GS D R = 40 , V : t , t < 5ns, Duty 1%, L IN r f Rise Time t 22 ns r t = 10 s w TurnOff Time t 190 ns d(off) Fall Time t 36 ns f Total Gate Charge Q V = 400V, V = 10V, I = 10A 45 nC g DD GS D GateSource Charge Q 25 nC gs GateDrain (Miller) Charge Q 20 nC gd Continuous Drain Reverse Current I 10 A DR Pulse Drain Reverse Current I 40 A DRP Diode Forward Voltage V I = 10A, V = 0V 1.7 V DSF DR GS Reverse Recovery Time t I = 10A, V = 0V, dI /dt = 100A/ s 1300 ns rr DR GS DR Reverse Recovery Charge Q 16 C rr .177 (4.5) .126 (3.2) Dia Max .106 (2.7) .405 (10.3) Max .272 (6.9) .622 (15.0) GD S .220 (5.6) Max .512 (13.0) Min .100 (2.54) .102 (2.6)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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