NTE2912 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Type Package D Features: Advanced Process technology Ultra Low ON Resistance Dynamic dv/dt Rating +175 C Operating Temperature G Fast Switching Fully Avalanche Rated S Description: The NTE2912 Power MOSFET utilizes advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO220 package is universally preferred for all commercial industrial applications at power dis- sipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C (Note 1) .......................................................... 82A C T = +100 C ................................................................. 58A C Pulsed Drain Current (Note 2), I .................................................. 280A DM Power Dissipation (T = +25 C), P ................................................ 230W C D Linear Derating Factor .................................................... 1.5W/ C GateSource Voltage, V ......................................................... 20V GS Avalanche Current (Note 2), I ...................................................... 43A AR Repetitive Avalanche Energy (Note 2), E .......................................... 23mJ AR Peak Diode Recovery dv/dt (Note 3, dv/dt, V .................................... 5.9V/ns DSS Operating Junction Temperature Range, T .................................. 55 to +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Note 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Note 2. Repetitive rating: pulse width limited by maximum channel temperature. Note 3. I 43A, di/dt 300A/s, V V , T +175 C. SD DD (BR)DSS J Rev. 1013Absolute Maximum Ratings (Contd): Lead Temperature (During Soldering, 1.6mm from case, 10sec), T .................... +300 C L Maximum Thermal Resistance, Junction toCase, R ........................... 0.65 C/W thJC Typical Thermal Resistance, Case toSink (Flat, greased surface), R ............. 0.5 C/W thCS Maximum Thermal Resistance, Junction toAmbient, R ......................... 62 C/W thJA Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 250 A 75 V (BR)DSS GS D Breakdown Voltage Temperature Coefficient V / T Reference to +25 C, I = 1mA 0.074 V/ C (BR)DSS J D Static Drain-to-Source On-Resistance R V = 10V, I = 43A, Note 5 13 m DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Forward Transconductance g V = 50V, I = 43A, Note 5 38 S fs DS D DrainSource Leakage Current I V = 75V, V = 0V 25 A DSS DS GS V = 60V, V = 0V, T = +150 C 250 A DS GS J GateSource Leakage Current I V = 20V 100 nA GSS GS Total Gate Charge Q I = 43A, V = 60V, V = 10V 160 nC g D DS GS GatetoSource Charge Q 29 nC gs GatetoDrain (Miller) Charge Q 55 nC gd TurnOn Delay Time t V = 38V, I = 43A, R = 2.5 , 13 ns d(on) DD D G V = 10V, Note 5 GS Rise Time t 64 ns r TurnOff Delay Time t 49 ns d(off) Fall Time t 48 ns f Internal Drain Inductance L 4.5 nH Between lead, .250 (6mm) from D package and center of die contact Internal Source Inductance L 7.5 nH S Input Capacitance C V = 0V, V = 25V, f = 1MHz 3820 pF iss GS DS Output Capacitance C 610 pF oss Reverse Transfer Capacitance C 130 pF rss Single Pulse Avalanche Energy (Note 4) E I = 50A, L = 370 H 1280 340 mJ AS AS (Note 6) (Note 7) Note 2. Repetitive rating: pulse width limited by maximum channel temperature. Note 4. Starting T = +25 C, L = 370 H, R = 25 , I = 43A, V = 10V. J G AS GS Note 5. Pulse width 400 s duty cycle 2%. Note 6. This is a typical value at device destruction and represents operation outside rated limits. Note 7. This is a calculated value limited to T = +175 C. J Source Drain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I Note 1 82 A S Pulsed Source Current (Body Diode) I Note 2 280 A SM Diode Forward Voltage V I = 43A, V = 0V, T = +25 C, Note 5 1.2 V SD S GS J Reverse Recovery Time t T = +25 C, I = 43A, 100 150 ns rr J F di/dt = 100A/ s, Note 5 Reverse Recovery Charge Q 410 610 C rr Forward TurnOn Time t Intrinsic turnon time is negligible (turnon is dominated by L + L ) on S D Note 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Note 2. Repetitive rating: pulse width limited by maximum channel temperature. Note 5. Pulse width 400 s duty cycle 2%.