PD-90549D IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804 HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE -TO-204AE (TO-3) REF:MIL-PRF-19500/562 100V, P-CHANNNEL Product Summary Part Number BVDSS RDS(on) ID IRF9130 -100V 0.30 -11A The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique processing of this latest State of the Art design achieves: very low on- state resistance combined with high transconductance superior reverse energy and diode recovery dv/dt capability. Features: The HEXFET transistors also feature all of the well Repetitive Avalanche Ratings established advantages of MOSFETs such as voltage Dynamic dv/dt Rating control, very fast switching, ease of parelleling and Hermetically Sealed temperature stability of the electrical parameters. Simple Drive Requirements They are well suited for applications such as switching Ease of Paralleling power supplies, motor controls, inverters, choppers, ESD Rating: Class 1C per MIL-STD-750, audio amplifiers and high energy pulse circuits. Method 1020 Absolute Maximum Ratings Parameter Units I V = 0V, T = 25C Continuous Drain Current -11 D GS C A I V = 0V, T = 100C Continuous Drain Current -7.0 D GS C I Pulsed Drain Current -44 DM P T = 25C Max. Power Dissipation 75 W D C Linear Derating Factor 0.60 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 207 mJ AS I Avalanche Current -11 A AR E Repetitive Avalanche Energy 7.5 mJ AR dv/dt Peak Diode Recovery dv/dt -5.5 V/ns T Operating Junction -55 to 150 J T Storage Temperature Range C STG Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 11.5 (typical) g For footnotes refer to the last page www.irf.com 1 IRF9130 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage -100 V V = 0V, I = -1.0mA DSS GS D BV / T Temperature Coefficient of Breakdown -0.087 V/C Reference to 25C, I = -1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.30 V = -10V, I = -7.0A DS(on) GS D Resistance 0.35 V = -10V, I = -11A GS D V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 3.0 S V = -15V, I = -7.0A fs DS DS I Zero Gate Voltage Drain Current -25 V = -80V, V = 0V DSS DS GS A -250 V = -80V DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward -100 V = -20V GSS GS nA I Gate-to-Source Leakage Reverse 100 V = 20V GSS GS Q Total Gate Charge 29 V = -10V, I = -11A g GS D Q Gate-to-Source Charge 7.1 nC V = -50V gs DS Q Gate-to-Drain (Miller) Charge 21 gd t Turn-On Delay Time 60 V = -50V, I = -11A, d(on) DD D t Rise Time 140 V = -10V, R = 7.5 r GS G ns t Turn-Off Delay Time 140 d(off) t Fall Time 140 f L L Total Inductance 6.1 nH S + D Measured from the center of drain pad to center of source pad C Input Capacitance 860 V = 0V, V = -25V iss GS DS C Output Capacitance 350 pF f = 1.0MHz oss C Reverse Transfer Capacitance 125 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) -11 S A I Pulse Source Current (Body Diode) -44 SM V Diode Forward Voltage -4.7 V T = 25C, I =-11A, V = 0V j SD S GS t Reverse Recovery Time 250 ns Tj = 25C, I =-11A, di/dt -100A/s rr F Q Reverse Recovery Charge 3.0 C V -50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction to Case 1.67 thJC C/W R Junction-to-Ambient 30 soldered to a 2 square copper-clad board thJA Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com