NTE2919 NTE

NTE2919 MOSFET PCh, Enhancement Mode D High Speed Switch TO220 Full Pack Type Package Features: Low ON Resistance G Ultra High Speed Switching 4V Drive S Absolute Maximum Ratings: (T = +25C unless otherwise specified) A DraintoSource Voltage, V ..................................................... 60V DSS GatetoSource Voltage, V ...................................................... 20V GS Drain Current, I D Continuous ................................................................. 20A Pulsed (Note 1) ............................................................. 80A Allowable Power Dissipation (T = +25C), P C D T = +25C ................................................................. 2.0W A T = +25C ................................................................. 25W C Channel Temperature, T ........................................................ +150 C ch Storage Temperature Range, T .......................................... 55 to +150C stg Note 1. Pulse Width 10s, Duty Cycle 1%. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 1A 60 V (BR)DSS GS D ZeroGate Voltage Drain Current I V = 60V, V = 0V 1 A DSS DS GS GatetoSource Leakage Current I V = 16V, V = 0 10 A GSS GS DS Cutoff Voltage V V = 10V, I = 1mA 1.2 2.6 V GS(off) DS D Forward Transfer Admittance y V = 10V, I = 10A 11 17 S fs DS D Static DraintoSource OnResistance R V = 10V, I = 10A 45 60 m DS(on) GS D V = 4V, I = 10A 65 92 m GS D Input Capacitance C V = 20V, f = 1MHz 2200 pF iss DS Output Capacitance C 220 pF oss Reverse Transfer Capacitance C 165 pF rss Rev. 914Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit TurnOn Delay Time t V = 30V, I = 10A, R = 3, 18 ns d(on) DD D L Note 1 Rise Time t 115 ns r TurnOff Delay Time t 190 ns d(off) Fall Time t 120 ns f Total Gate Charge Q I = 20A, V = 30V, V = 10V 45 nC g D DS GS GatetoSource Charge Q 7.4 nC gs GatetoDrain (Miller) Charge Q 9 nC gd Diode Forward Voltage V I = 20A, V = 0 0.95 1.2 V SD S GS Note 1. Pulse Width 10s, Duty Cycle 1%. .177 (4.5) .394 (10.0) .110 (2.8) .138 (3.5) .283 (7.2) .630 (16.0) GSD .220 (5.6) .551 (14.0) Min .100 (2.54) .094 (2.4)