NTE2926 MOSFET NCh, Enhancement Mode High Speed Switch TO3PN Type Package Features: Good Frequency Characteristic D High Speed Switching Wide Area of Safe Operation Enhancement Mode Good Complementary Characteristics G Equipped with Gate Protection Diodes Suitable for Audio Power Amplifier S Absolute Maximum Ratings: DrainSource Voltage, V ........................................................ 160V DSX GateSource Voltage, V ......................................................... 15 GSS Drain Current, I .................................................................... 7A D Body toDrain Diode Reverse Drain Current, I ....................................... 7A DR Channel Dissipation (T = +25 C), P .............................................. 100W C ch Channel Temperature, T ........................................................ +150 C ch Storage Temperature Range, T .......................................... 55 to +150 C stg Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V V = 10V, I = 10mA 160 V (BR)DSX GS D GateSource Breakdown Voltage V V = 0V, I = 100 A 15 V (BR)GSS DS G GateSource Cutoff Voltage V V = 10V, I = 100mA 0.15 1.45 V GS(off) DS D DrainSource Saturation Voltage V V = 0V, I = 7A, Note 1 12 V DS(sat) GD D Forward Transfer Admittance Y V = 10V, I = 3A, Note 1 0.7 1.0 1.4 S fs DS D Input Capacitance C 600 pF V = 5V, V = 10V, f = 1MHz iss GS DS Output Capacitance C 350 pF oss Reverse Transfer Capacitance C 10 pF rss TurnOn Time t 180 ns V = 20V, I = 4A on DD D TurnOff Time t 60 ns off Note 1. Pulse test..189 (4.8) .614 (15.6) S .787 (20.0) .590 .138 (15.0) (3.5) Dia .889 (22.6) GS D .215 (5.45)