NTE2947 & NTE2947F MOSFET NChannel, Enhancement Mode High Speed Switches TO220 Type Package Features: Available in Standard TO 220 (NTE2947) and TO 220 Full Pack (NTE2947F) D R = 220 m (Typ) V = 10V, I = 9A DS(on) GS D Low Gate Charge (Typ 45nC) Low C (Typ 25pF) rss 100% Avalanche Tested G Applications: LCD/LED/PDP TV Lighting S Uninterruptible Power Supply Absolute Maximum Ratings: DrainSource Voltage, V ........................................................ 500V DSS GateSource Voltage, V ...................................................... . 30V GS Drain Current, Continuous (Note 1), I D T = +25C .................................................................. 18A C T = +100C ............................................................... 10.8A C Drain Current, Pulsed (Note 1, Note 2), I ............................................ 72A DM Avalanche Current (Note 2), I ...................................................... 18A AS Single Pulsed Avalanche Energy (Note 3), E ...................................... 945mJ AS Repetitive Avalanche Energy (Note 2), E ......................................... 23.5mJ AR Peak Diode Recovery (Note 4), dv/dt .............................................. 4.5V/ns Total Power Dissipation, (T = +25C), P C D NTE2947 .................................................................. 235W Derate Above 25 C ................................................... 1.88W/ C NTE2947F ................................................................ 38.5W Derate Above 25 C .................................................... 0.3W/ C Operating Junction Temperature Range, T .................................. 55 to +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Maximum Lead Temperature (During Soldering, 1/8 from case, 5sec), T .............. +300 C L Maximum Thermal Resistance, Junction toCase, R thJC NTE2947 ............................................................... 0.53 C/W NTE2947F .............................................................. 3.3 C/W Maximum Thermal Resistance, Junction toAmbient, R ......................... 62.5K/W thJA Note 1. Drain current limited by maximum junction temperature (TO 220 Full Pack ONLY). Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 3. L = 5.2mH, IAS = 18, V = 50V, R = 25, Starting T = +25C. DD G J Note 4. I 18A, di/dt 200A s, V BV , starting T = +25C SD DD DSS JElectrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage BV V = 0v, I = 250A 500 V DSS GS D Breakdown Voltage Temperature Coefficient BV /T I = 250A, Referenced to 25 C 0.5 V/C DSS J D Zero Gate Voltage Drain Current I V = 500V, V = 0V 1 A DSS DS GS GateBody Leakage Current Forward I V = 30V, V = 0V 100 nA GSSF GS DS GateBody Leakage Current Reverse I V = 30V, V = 0V 100 nA GSSR GS DS V = 400V, T = +125C 10 A DS C On Characteristics Gate Threshold Voltage V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D Static DrainSource ON Resistance R V = 10V, I = 9A 0.220 0.265 DS(on) GS D Forward Transconductance g V = 40V, I = 9A 25 S fs DS D Dynamic Characteristics Input Capacitance C V = 25V, V =0V, f = 1MHz 2200 2860 pF iss DS GS Output Capacitance C 330 430 pF oss Reverse Transfer Capacitance C 25 40 pF rss Switching Characteristics TurnOn Delay Time t V = 250V I = 18A, 55 120 ns d(on) DD , D V = 10V, R = 25, Note 5 GS G TurnOn Rise Time t 165 340 ns r TurnOff Delay Time t 95 200 ns d(off) TurnOn Fall Time t 90 190 ns f Total Gate Charge (GateSource Plus GateDrain) Q V = 400V, I = 18A, 45 60 nC g DS D V = 10V, Note 5 GS GateSource Charge Q 12.5 nC gs GateDrain (Miller) Charge Q 19 nC gd SourceDrain Diode Characteristics and Maximum Ratings Continuous Source Current I (Body Diode) 18 A S Pulse Source Current I (Body Diode) Note 3 72 A SM Diode Forward Voltage V V = 0V, I = 18A 1.4 V SD GS S Reverse Recovery Time t V = 0V, I = 18A, 500 ns rr GS S dI /dt = 100A/s F Reverse Recovery Charge t 5.4 C rr Note 3. L = 5.2mH, IAS = 18, V = 50V, R = 25, Starting T = +25C. DD G J Note 5. Essentially independent of operating temperature typical characteristics.