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X-On Electronics has gained recognition as a prominent supplier of NTE2947F MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE2947F MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE2947F NTE

NTE2947F electronic component of NTE
NTE2947F NTE
NTE2947F MOSFETs
NTE2947F  Semiconductors

Images are for reference only
See Product Specifications
Part No. NTE2947F
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 500V; 18A; TO220F
Datasheet: NTE2947F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 6.612 ea
Line Total: USD 66.12 
Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 10
Multiples : 1
10 : USD 6.612
50 : USD 4.0156
100 : USD 3.7018
200 : USD 3.4404
500 : USD 3.2104

0
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 7.1999
3 : USD 6.4773
4 : USD 4.7167
9 : USD 4.4671

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2947F from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2947F and other electronic components in the MOSFETs category and beyond.

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NTE2947 & NTE2947F MOSFET NChannel, Enhancement Mode High Speed Switches TO220 Type Package Features: Available in Standard TO 220 (NTE2947) and TO 220 Full Pack (NTE2947F) D R = 220 m (Typ) V = 10V, I = 9A DS(on) GS D Low Gate Charge (Typ 45nC) Low C (Typ 25pF) rss 100% Avalanche Tested G Applications: LCD/LED/PDP TV Lighting S Uninterruptible Power Supply Absolute Maximum Ratings: DrainSource Voltage, V ........................................................ 500V DSS GateSource Voltage, V ...................................................... . 30V GS Drain Current, Continuous (Note 1), I D T = +25C .................................................................. 18A C T = +100C ............................................................... 10.8A C Drain Current, Pulsed (Note 1, Note 2), I ............................................ 72A DM Avalanche Current (Note 2), I ...................................................... 18A AS Single Pulsed Avalanche Energy (Note 3), E ...................................... 945mJ AS Repetitive Avalanche Energy (Note 2), E ......................................... 23.5mJ AR Peak Diode Recovery (Note 4), dv/dt .............................................. 4.5V/ns Total Power Dissipation, (T = +25C), P C D NTE2947 .................................................................. 235W Derate Above 25 C ................................................... 1.88W/ C NTE2947F ................................................................ 38.5W Derate Above 25 C .................................................... 0.3W/ C Operating Junction Temperature Range, T .................................. 55 to +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Maximum Lead Temperature (During Soldering, 1/8 from case, 5sec), T .............. +300 C L Maximum Thermal Resistance, Junction toCase, R thJC NTE2947 ............................................................... 0.53 C/W NTE2947F .............................................................. 3.3 C/W Maximum Thermal Resistance, Junction toAmbient, R ......................... 62.5K/W thJA Note 1. Drain current limited by maximum junction temperature (TO 220 Full Pack ONLY). Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 3. L = 5.2mH, IAS = 18, V = 50V, R = 25, Starting T = +25C. DD G J Note 4. I 18A, di/dt 200A s, V BV , starting T = +25C SD DD DSS JElectrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage BV V = 0v, I = 250A 500 V DSS GS D Breakdown Voltage Temperature Coefficient BV /T I = 250A, Referenced to 25 C 0.5 V/C DSS J D Zero Gate Voltage Drain Current I V = 500V, V = 0V 1 A DSS DS GS GateBody Leakage Current Forward I V = 30V, V = 0V 100 nA GSSF GS DS GateBody Leakage Current Reverse I V = 30V, V = 0V 100 nA GSSR GS DS V = 400V, T = +125C 10 A DS C On Characteristics Gate Threshold Voltage V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D Static DrainSource ON Resistance R V = 10V, I = 9A 0.220 0.265 DS(on) GS D Forward Transconductance g V = 40V, I = 9A 25 S fs DS D Dynamic Characteristics Input Capacitance C V = 25V, V =0V, f = 1MHz 2200 2860 pF iss DS GS Output Capacitance C 330 430 pF oss Reverse Transfer Capacitance C 25 40 pF rss Switching Characteristics TurnOn Delay Time t V = 250V I = 18A, 55 120 ns d(on) DD , D V = 10V, R = 25, Note 5 GS G TurnOn Rise Time t 165 340 ns r TurnOff Delay Time t 95 200 ns d(off) TurnOn Fall Time t 90 190 ns f Total Gate Charge (GateSource Plus GateDrain) Q V = 400V, I = 18A, 45 60 nC g DS D V = 10V, Note 5 GS GateSource Charge Q 12.5 nC gs GateDrain (Miller) Charge Q 19 nC gd SourceDrain Diode Characteristics and Maximum Ratings Continuous Source Current I (Body Diode) 18 A S Pulse Source Current I (Body Diode) Note 3 72 A SM Diode Forward Voltage V V = 0V, I = 18A 1.4 V SD GS S Reverse Recovery Time t V = 0V, I = 18A, 500 ns rr GS S dI /dt = 100A/s F Reverse Recovery Charge t 5.4 C rr Note 3. L = 5.2mH, IAS = 18, V = 50V, R = 25, Starting T = +25C. DD G J Note 5. Essentially independent of operating temperature typical characteristics.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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